Method of manufacturing a semiconductor device

ABSTRACT

An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a metal plate having an upper surface (first surface), a lower surface (second surface) opposite to the upper surface, and a plurality of side surfaces located between the upper and lower surfaces and having a semiconductor chip mounted thereover. A portion of the metal plate is exposed from a sealing body sealing the semiconductor chip. The exposed portion is covered with a metal film. The side surfaces of the metal plate include a first side surface covered with the sealing body and a side surface (second side surface) provided opposite to the first side surface and exposed from the sealing body. Between the upper and side surfaces of the metal plate, an inclined surface inclined with respect to each of the upper and side surfaces and covered with the metal film is interposed.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2015-248767 filed onDec. 21, 2015 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND

The present invention relates to a semiconductor device and to, e.g., asemiconductor device having a metal plate exposed at a mounting surface.

Japanese Unexamined Patent Publication No. 2010-267789 (PatentDocument 1) describes a semiconductor device in which a semiconductorchip is mounted over a metal base plate and a portion of the metal baseplate is exposed from a sealing body.

Also, Japanese Unexamined Patent Publication No. Hei 8(1996)-274231(Patent Document 2) describes a semiconductor device in which the edgeportion of a die pad over which a semiconductor chip is mounted isprovided with a chamfered portion.

RELATED ART DOCUMENTS Patent Documents

[Patent Document 1] Japanese Unexamined Patent Publication No.2010-267789

[Patent Document 2] Japanese Unexamined Patent Publication No. Hei8(1996)-274231

SUMMARY

In a semiconductor device in which a semiconductor chip mounted over ametal plate is sealed with a resin, there is a structure in which aportion of the metal plate is exposed from a sealing body. In theforegoing semiconductor device, to improve the wettability of a soldermaterial used when the semiconductor device is mounted over a mountingsubstrate (mother board), e.g., a metal film covering the exposedsurface of the foregoing metal plate exposed from the foregoing sealingbody is formed. However, as a result of conducting study, the presentinventors have found that, when a metal crystal referred to as a whiskergrows over the top surface of the foregoing metal film, a problem arisesin terms of the reliability of the semiconductor device.

Other problems and novel features of the present invention will becomeapparent from a statement in the present specification and theaccompanying drawings.

A semiconductor device according to an embodiment includes a firstsurface, a second surface opposite to the foregoing first surface, and aplurality of side surfaces located between the first and second surfacesand includes a metal plate over which a semiconductor chip is mounted. Aportion of the foregoing metal plate is exposed from a sealing bodysealing the semiconductor chip. The exposed portion is covered with ametal film. The plurality of side surfaces of the foregoing metal plateinclude a first side surface covered with the foregoing sealing body anda second side surface provided opposite to the foregoing first sidesurface and exposed from the foregoing sealing body. Between theforegoing first surface and the foregoing second side surface of theforegoing metal plate, a first inclined surface which is inclined withrespect to each of the foregoing first and second side surfaces andcovered with the foregoing metal film is interposed.

According to the foregoing embodiment, the performance of thesemiconductor device can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustrative view schematically showing an example of acircuit included in a semiconductor device in an embodiment;

FIG. 2 is a main-portion cross-sectional view showing an example of theelement structure of the field effect transistor shown in FIG. 1;

FIG. 3 is a top view of the semiconductor device shown in FIG. 1;

FIG. 4 is a bottom view of the semiconductor device shown in FIG. 3;

FIG. 5 is a perspective plan view showing the inner structure of thesemiconductor device in a state where the sealing body shown in FIG. 3is removed;

FIG. 6 is a cross-sectional view along the line A-A in FIG. 3;

FIG. 7 is an enlarged cross-sectional view of the periphery of theportion of an electronic device having the semiconductor device shown inFIGS. 3 to 6 mounted therein where the semiconductor device is mounted;

FIG. 8 is an enlarged cross-sectional view of the portion A shown inFIG. 7;

FIG. 9 is an enlarged cross-sectional view showing a state before theportion of the metal plate which is shown in FIG. 8 is mounted over amounting substrate;

FIG. 10 is a side view obtained by viewing the semiconductor deviceshown in FIG. 3 from the inclined surface of the metal plate;

FIG. 11 is a cross-sectional view along the line B-B in FIG. 3;

FIG. 12 is a cross-sectional view along the line C-C in FIG. 3;

FIG. 13 is an illustrative view showing the outline of the manufacturingprocess of the semiconductor device described using FIGS. 1 to 12;

FIG. 14 is an enlarged plan view showing a portion of a lead frameprovided in the lead frame provision step shown in FIG. 13;

FIG. 15 is an enlarged plan view of each one of the device formationportions shown in FIG. 14;

FIG. 16 is an enlarged cross-sectional view along the line A-A in FIG.15;

FIG. 17 is an enlarged perspective view showing an example of the shapeof a material plate shaped in the material plate shaping step shown inFIG. 13;

FIG. 18 is an enlarged perspective view showing an example of a statewhere the groove formed in the material plate shown in FIG. 17 is formedby press working;

FIG. 19 is an enlarged cross-sectional view showing a state where aportion of the material plate is removed by press working in thepatterning step shown in FIG. 13;

FIG. 20 is an enlarged plan view showing a state where a semiconductorchip is mounted over the die pad shown in FIG. 15;

FIG. 21 is an enlarged plan view showing a state where the semiconductorchip shown in FIG. 20 is electrically coupled to a gate lead and asource lead via metal wires;

FIG. 22 is an enlarged plan view showing a state where a sealing bodysealing the semiconductor chip and the wires shown in FIG. 21 is formed;

FIG. 23 is an enlarged cross-sectional view showing a state where a leadframe is placed in a mold in a cross section along the line A-A in FIG.22;

FIG. 24 is an enlarged cross-sectional view showing a state where ametal film (plating film) is formed over the surface of the lead frameshown in FIG. 22 which is exposed from the sealing body;

FIG. 25 is an illustrative view showing the outline of a plating stepusing an electrolytic plating method;

FIG. 26 is an enlarged plan view schematically showing a position wherea tie bar is cut in the metal plate separation step shown in FIG. 13;

FIG. 27 is an illustrative view showing a standard for measuring thelength of a whisker in the evaluation of the whisker shown in Tables 1and 2;

FIG. 28 is an enlarged cross-sectional view showing a state before theportion of a metal plate in a semiconductor device in a modification ofthe state shown in FIG. 9 is mounted over a mounting substrate;

FIG. 29 is a plan view showing the semiconductor device in amodification of the semiconductor device in FIG. 3;

FIG. 30 is a cross-sectional view along the line A-A in FIG. 29;

FIG. 31 is a cross-sectional view along the line B-B in FIG. 29;

FIG. 32 is an illustrative view showing a modification of thesemiconductor device shown in FIG. 13;

FIG. 33 is an enlarged cross-sectional view showing a state where asemiconductor device is mounted over a mounting substrate in a studiedexample, which is provided for comparison with FIG. 7; and

FIG. 34 is an enlarged cross-sectional view of the portion A in FIG. 33.

DETAILED DESCRIPTION Explanation of Description Form, Basic Terminology,and Use Thereof in Present Invention

In the present invention, if necessary for the sake of convenience, theembodiment will be described by being divided into a plurality ofsections or the like. However, they are by no means independent of ordistinct from each other unless particularly explicitly describedotherwise, and one of the individual parts of a single example isdetails, modifications, and so forth of part or the whole of the othersirrespective the order in which they are described. In principle, arepetitive description of like parts will be omitted. Also, eachcomponent in the embodiment is not indispensable unless particularlyexplicitly described otherwise, unless the component is theoreticallylimited to a specific number, or unless it is obvious from the contextthat the component is indispensable.

Likewise, even when such wording as “X comprised of A” is used inassociation with a material, a composition, or the like in thedescription of the embodiment or the like, it is not intended to excludea material, a composition, or the like which contains an element otherthan A unless particularly explicitly described otherwise or unless itis obvious from the context that it excludes such a material, acomposition, or the like. For example, when a component is mentioned,the wording means “X containing A as a main component” or the like. Itwill be appreciated that, even when a “silicon member” or the like ismentioned, it is not limited to pure silicon, and a member containing aSiGe (silicon germanium) alloy, another multi-element alloy containingsilicon as a main component, another additive, or the like is alsoincluded. Additionally, even when a gold plating, a Cu layer, a nickelplating, or the like is mentioned, it is assumed to include not only apure gold plating, a pure Cu layer, a pure nickel plating, or the like,but also a member containing gold, Cu, nickel, or the like as a maincomponent unless it is particularly explicitly described otherwise.

Further, when a specific numerical value or numerical amount ismentioned, it may be either more or less than the specific numericalvalue unless particularly explicitly described otherwise, unless thenumerical value or numerical amount is theoretically limited to thenumber, or unless it is obvious from the context that the numeral valueor numerical amount is limited to the number.

In the individual drawings for the embodiment, the same or like partsare designated by the same or similar symbols or reference numerals, andthe description thereof will not be repeated in principle.

In the accompanying drawings, hatching or the like may be omitted evenin a cross section when hatching or the like results in complicatedillustration or when the distinction between a portion to be hatched anda vacant space is distinct. In relation thereto, even when a hole istwo-dimensionally closed, the background outline thereof may be omittedwhen it is obvious from the description or the like that the hole istwo-dimensionally closed, and so forth. On the other hand, even thoughnot shown in a cross section, a portion other than a vacant space may behatched with lines or dots to clearly show that the hatched portion isnot a vacant space or clearly show the boundary of a region.

In the following description, when a solder, a solder substance, asolder material, or a solder component is mentioned, it refers to, e.g.,a Sn—Pb solder containing lead (Pb) or a so-called lead-free solderwhich does not substantially contain Pb. Examples of the lead-freesolder include a pure lead (Sn) solder, a lead-bismuth (Sn—Bi) solder, atin-copper-silver (Sn—Cu—Ag) solder, a tin-copper (Sn—Cu) solder, andthe like. The lead-free solder used herein means a solder having a lead(Pb) content of not more than 0.1 wt %. The content is determined as astandard in Restriction of Hazardous Substances (RoHs) Directive.

Embodiment 1

In the present embodiment, as an example of a semiconductor devicehaving a metal plate exposed at a mounting surface, a semiconductordevice referred to as a power device or a power semiconductor devicewhich is incorporated into a power control circuit such as a powersupply circuit will be described. The semiconductor device describedbelow is incorporated into a power conversion circuit to function as aswitching element.

<Example of Circuit Configuration>

FIG. 1 is an illustrative view schematically showing an example of thecircuit included in the semiconductor device in the present embodiment.FIG. 2 is a main-portion cross-sectional view showing an example of theelement structure of the field effect transistor shown in FIG. 1.

Power control semiconductor devices referred to as power semiconductordevices include one having a semiconductor element such as, e.g., adiode, a thyristor, or a transistor. A semiconductor device PKG1 in thepresent embodiment has a semiconductor chip 10 formed with a transistorQ1, as shown in FIG. 1. In the example shown in FIGS. 1 and 2, thetransistor Q1 formed in the semiconductor chip 10 is a field effecttransistor, specifically MOSFET (Metal Oxide Semiconductor Field EffectTransistor). In a power semiconductor device, a transistor is used as,e.g., a switching element. A MOSFET used in a power semiconductor deviceis referred to as a power MOSFET.

The MOSFET mentioned above is shown as a term broadly representing afield effect transistor having a structure in which a gate electrodemade of a conductive material is placed over a gate insulating film.Accordingly, even when a MOSFET is mentioned, it is not intended toexclude a gate insulating film other than an oxide film. Also, even whena MOSFET is mentioned, it is not intended to exclude a gate electrodematerial other than a metal such as, e.g., polysilicon.

Also, the transistor Q1 shown in FIG. 1 is formed of, e.g., an n-channelfield effect transistor as shown in FIG. 2. FIG. 2 is a main-portioncross-sectional view showing an example of the element structure of thefield effect transistor shown in FIG. 1.

In the example shown in FIG. 2, an n-type epitaxial layer EP is formedover a main surface WHt of a semiconductor substrate WH made of, e.g.,n-type monocrystalline silicon. The semiconductor substrate WH and theepitaxial layer EP are included in the drain region (region equivalentto a drain D shown in FIG. 1) of the MOSFET. The drain region iselectrically coupled to a drain electrode DE formed over the backsurface of the semiconductor chip 10.

Over the epitaxial layer EP, a channel formation region CH as a p⁺-typesemiconductor region is formed. Over the channel formation region CH, asource region (region equivalent to a source S shown in FIG. 1) SR as ann⁺-type semiconductor region is formed. The source region SR iselectrically coupled to a source electrode pad SE formed over the mainsurface of the semiconductor chip 10 via a lead-out wire. In thesemiconductor region stacked over the semiconductor substrate WH, atrench (opening or groove) TR1 is formed to extend from the uppersurface of the source region SR through the channel formation region CHand reach the interior of the epitaxial layer EP.

Over the inner wall of the trench TR1, a gate insulating film GI isformed. Over the gate insulating film GI, a gate electrode G is formedin stacked relation so as to be embedded in the trench TR1. The gateelectrode G is electrically coupled to a gate electrode pad GE of thesemiconductor chip 10 via a lead-out wire.

In the transistor Q1, the drain region and the source region SR arearranged in a thickness direction with the channel formation region CHbeing interposed therebetween so that a channel (hereinafter referred toas a vertical channel structure) is formed in the thickness direction.In this case, the area occupied by the element in plan view can bereduced compared to that in a field effect transistor having a channelformed along the main surface WHt. Accordingly, the two-dimensional sizeof the semiconductor chip 10 can be reduced.

Also, in the case of the vertical channel structure described above, thewidth of the channel per unit area can be increased in plan view. Thiscan reduce the ON resistance. Note that FIG. 2 is a view showing theelement structure of the field effect transistor. In the semiconductorchip 10 shown in FIG. 1, a plurality of (a large number of) thetransistors Q1 each having, e.g., an element structure as shown in FIG.2 are coupled in parallel to each other. This allows a power MOSFET inwhich a large current of, e.g., more than 1 ampere flows to beconfigured.

As described above, in the case of configuring the MOSFET by couplingthe plurality of transistors Q1 each having the vertical channelstructure in parallel to each other, the electric properties (primarilythe voltage resistance property, ON resistance property, and capacitanceproperty) of the MOSFET vary in accordance with the two-dimensional sizeof the semiconductor chip 10. For example, when the two-dimensional areaof the semiconductor chip 10 is increased, the number of the cells(i.e., the number of the elements) of the parallel-coupled transistorsQ1 increases to reduce the ON resistance and increase the capacitance.

Note that, in FIGS. 1 and 2, as an example of the switching elementincluded in the power semiconductor device, the MOSFET is shown.However, various modifications can be applied thereto. For example,instead of the MOSFET, an Insulated Gate Bipolar Transistor (IGBT) canalso be included.

<Semiconductor Device>

Next, a description will be given of the package structure of thesemiconductor device PKG1 shown in FIG. 1. FIG. 3 is a top view of thesemiconductor device shown in FIG. 1. FIG. 4 is a bottom view of thesemiconductor device shown in FIG. 3. FIG. 5 is a perspective plan viewshowing the inner structure of the semiconductor device in a state fromwhich the sealing body shown in FIG. 3 has been removed. FIG. 6 is across-sectional view along the line A-A in FIG. 3.

The semiconductor device PKG1 in the present embodiment includes thesemiconductor chip 10 (see FIGS. 5 and 6), a metal plate (die pad, chipmounting portion, or a heat dissipation plate) 20 (see FIGS. 4 to 6)over which the semiconductor chip 10 is mounted, and a plurality ofleads (terminal) 30 as external terminals. The semiconductor chip 10, anupper surface 20 t of the metal plate 20, and upper surfaces 30 t of theplurality of leads are collectively sealed in a sealing body (resinbody) 40.

In the present embodiment, as shown in FIG. 5, the plurality of leads 30are arranged in juxtaposition with the metal plate 20 along aY-direction and arranged in juxtaposition with each other along anX-direction orthogonal to the Y-direction. Also, in the example shown inFIG. 5, a lead for source (source lead or source terminal) 30S, a leadfor drain (drain lead or drain terminal) 30D, and a lead for gate (gatelead or gate terminal) 30G are arranged successively in juxtapositionwith each other along the X-direction in plan view.

As shown in FIG. 6, the semiconductor chip 10 has a top surface(surface) 10 t and a back surface (surface) 10 b located opposite to thetop surface 10 t. As shown in FIG. 5, the top surface 10 t (or the backsurface 10 b shown in FIG. 6) of the semiconductor chip 10 has aquadrilateral shape in plan view and has four side surfaces 10 s alongthe peripheral edge portion thereof. In the example shown in FIG. 5, thesemiconductor chip 10 has a rectangular shape in plan view and has longsides located along the X-direction.

Also, as shown in FIG. 5, over the top surface 10 t of the semiconductorchip 10, the source electrode pad SE electrically coupled to the sourceS shown in FIG. 1 and the gate electrode pad GE electrically coupled tothe gate electrode G shown in FIG. 1 are formed. On the other hand, asshown in FIG. 6, over the back surface 10 b of the semiconductor chip10, the drain electrode DE electrically coupled to the drain D shown inFIG. 1 is formed. In the example shown in FIG. 6, the entire backsurface 10 b of the semiconductor chip 10 serves as the drain electrodeDE.

As shown in FIG. 2, when the semiconductor chip 10 is provided with thevertical channel structure, by reducing the thickness of thesemiconductor chip 10 (reducing the distance between the top surface 10t and the back surface 10 b each shown in FIG. 6), the ON resistance canbe reduced. On the other hand, in terms of increasing the heatcapacitance of the metal plate 20 or increasing the cross-sectional areaof a conduction path in which a current flows, the thickness of themetal plate 20 is preferably larger. Accordingly, in the example shownin FIG. 6, the thickness of the metal plate 20 is larger than thethickness of the semiconductor chip 10. For example, in the exampleshown in FIG. 6, the thickness of the metal plate 20 is not less than400 μm.

Also, as shown in FIGS. 5 and 6, the semiconductor device PKG1 has themetal plate (die pad, chip mounting portion, or heat dissipation plate)20 over which the semiconductor chip 10 is mounted. As shown in FIG. 6,the metal plate 20 has the upper surface (chip mounting surface or firstmain surface) 20 t over which the semiconductor chip is mounted via adie bonding material 11 and a lower surface (mounting surface or secondmain surface) 20 b opposite to the upper surface 20 t. As shown in FIG.4, the lower surface 20 b of the metal plate 20 has a plurality of sidesurfaces 20 s along the peripheral edge portion thereof which arecontinued to the lower surface 20 b.

Also, in the example of the present embodiment, as shown in FIG. 5, theplurality of side surfaces 20 s include a side surface 20 s 1 which isprovided to face the plurality of leads 30 in plan view and sealed inthe sealing body 40. The plurality of side surfaces 20 s also include aside surface 20 s 2 provided opposite to the side surface 20 s 1,exposed from the sealing body 40, and covered with a metal film 22 (seeFIG. 6). The plurality of side surfaces 20 s also include a side surface20 s 3 continued to one end portion of the side surface 20 s 2 andexposed from the sealing body 40. The plurality of side surfaces 20 salso include a side surface 20 s 4 continued to the other end portion ofthe side surface 20 s 2 and exposed from the sealing body 40. Theplurality of side surfaces 20 s also include a side surface 20 s 5continued to the end portion of the side surface 20 s 3 and exposed fromthe sealing body 40. The plurality of side surfaces 20 s also include aside surface 20 s 6 continued to the side surface 20 s 4 and exposedfrom the sealing body 40.

The metal plate 20 is formed integrally with the lead 30D as the drainterminal. The lead 30D is an external terminal electrically coupled tothe drain D shown in FIG. 1. As also shown in FIG. 6, the drainelectrode DE formed over the back surface 10 b of the semiconductor chip10 is electrically coupled to the metal plate 20 via the die bondingmaterial 11 made of a conductive material. In the example shown in FIG.5, the two-dimensional size (area of the top surface 10 t) of thesemiconductor chip 10 is smaller than the two-dimensional size (area ofthe upper surface 20 t) of the metal plate 20.

As shown in FIGS. 4 and 6, the lower surface 20 b of the metal plate 20is exposed from the sealing body 40 at a lower surface 40 b of thesealing body 40. In the example shown in FIG. 4, the area of the lowersurface 20 b of the metal plate 20 is equal to or larger than the areaof the lower surface 40 b of the sealing body 40. As also shown in FIG.3, a portion of the metal plate 20 outwardly protrudes from one of aplurality of side surfaces 40 s of the sealing body 40 in plan view whenviewed from the upper surface 20 t of the metal plate 20. As also shownin FIGS. 3 and 6, a portion of the upper surface 20 t of the metal plate20 and some (at least the side surface 20 s 2) of the plurality of sidesurfaces 20 s of the metal plate 20 are exposed from the sealing body40. By increasing the two-dimensional size of the metal plate 20 andexposing a portion of the metal plate 20 from the sealing body 40 as inthe present embodiment, it is possible to improve the heat dissipationefficiency of the heat generated in the semiconductor chip 10.

Also, since the lower surface 20 b of the metal plate 20 coupled to thelead 30D as the external terminal is exposed from the sealing body 40,the cross-sectional area of the conduction path in which a current flowscan be increased. This allows a reduction in impedance in the conductionpath. In particular, when the lead 30D serves as the external terminalcorresponding to the output node of the circuit of the semiconductordevice PKG1, the lower surface 20 b of the metal plate 20 which isexposed from the sealing body 40 is preferable in that, by reducing theimpedance component of the conduction path coupled to the lead 30D, apower loss in output line can directly be reduced.

The metal plate 20 has a base material 21 made of the same metalmaterial as that of the plurality of leads 30, e.g., copper (Cu) or analloy material containing copper (Cu) as a main component. Each of theplurality of leads 30 has a base material 31 made of the same metalmaterial as that of the metal plate 20, e.g., copper (Cu) or an alloymaterial containing copper (Cu) as a main component.

In the example shown in FIG. 6, the thickness of the metal plate 20(distance from one of the upper and lower surfaces 20 t and 20 b to theother thereof) is larger than the thickness of each of the leads 30(distance from one of the upper and lower surfaces 30 t and 30 b to theother thereof). When the thickness of the metal plate 20 is large as inthe present embodiment, the heat capacitance of the metal plate 20 isincreased. As a result, the heat dissipation property of thesemiconductor device PKG1 improves due to the metal plate 20.

Of the metal plate 20, the portion (exposed portion) exposed from thesealing body 40 is covered with the metal film 22. Likewise, of theleads 30, the portions (exposed portions) exposed from the sealing body40 are respectively covered with metal films 32. The metal films 22 and32 are Intended to improve the wettability of a solder material 53 (seeFIG. 7 described later) used as a coupling material when thesemiconductor device PKG1 is mounted over a mounting substrate 50 (seeFIG. 7 described later). The metal films 22 and 32 are, e.g., platingmetal films formed by an electrolytic plating method. The metal films 22and 32 are made of, e.g., a solder material containing tin (Sn).

The die bonding material (adhesive material) 11 shown in FIGS. 5 and 6are a conductive member (die bonding material) for fixing thesemiconductor chip 10 onto the metal plate 20 and electrically couplingthe semiconductor chip 10 to the metal plate 20. As the die bondingmaterial 11, e.g., a solder material may also be used. Alternatively,the die bonding material 11 may also be a conductive resin adhesivematerial containing a plurality of silver (Ag) grains (Ag filler)referred to as a so-called a silver (Ag) paste. Note that a metal film(the illustration thereof is omitted) having adhesion to the die bondingmaterial 11 higher than that of copper (Cu) or a copper alloy as thebase material of the metal plate 20 may also be formed over a portion ofthe upper surface 20 t of the metal plate 20. This can improve theadhesion strength between the die bonding material 11 and the metalplate 20.

As also shown in FIG. 5, the source electrode pad SE of thesemiconductor chip 10 and the lead 30S are electrically coupled to eachother via a wire (conductive member or metal wire) 12 (specifically, awire 12 s). Likewise, the gate electrode pad GE of the semiconductorchip 10 and the lead 30G are electrically coupled to each other via thewire 12 (specifically, a wire 12 g). The wires 12 are conductive memberscoupling the electrode pads over the top surface 10 t of thesemiconductor chip 10 to the leads 30 and contain a metal such as, e.g.,aluminum (Al), copper (Cu), silver (Ag), or gold (Au) as a maincomponent.

As shown in FIG. 5, one end of the wire 12 s is bonded to the sourceelectrode pad SE of the semiconductor chip 10. On the other hand, theother end of the wire 12 s opposite to the foregoing one end is bondedto the upper surface of the coupling portion formed in a portion of thelead 30S. One end of the wire 12 g is bonded to the gate electrode padGE of the semiconductor chip 10. On the other hand, the other end of thewire 12 g opposite to the foregoing one end is bonded to the uppersurface of the coupling portion formed in a portion of the lead 30G.

In the example shown in FIG. 5, the semiconductor chip 10 has arectangular shape in plan view, while the plurality of wires 12 areplaced so as to cross the long sides of the semiconductor chip 10.

In the power semiconductor device, in a wiring path coupled to thesource electrode pad SE, a current larger than a current in a wiringpath coupled to the gate electrode pad GE flows. Accordingly, in theexample shown in FIG. 5, the thickness of the wire 12 s is larger thanthat of the wire 12 g. Note that the shapes and number of the wires 12are not limited to those in the form shown in FIG. 5, but have variousmodifications. For example, the thickness of the wire 12 g may also bethe same as that of the wire 12 s. Alternatively, for example, thesource electrode pad SE and the lead 30S may also be electricallycoupled to each other via a plurality of the wires 12 s.

The semiconductor chip 10, the plurality of leads 30, and the pluralityof wires 12 are sealed in the sealing body 40. The sealing body 40 is aresin body sealing the semiconductor chip 10 and the wires 12 s and 12 gand has an upper surface 40 t (see FIGS. 3 and 6) and the lower surface(mounting surface) 40 b (see FIGS. 4, 6, and 7) located opposite to theupper surface 40 t. As shown in FIGS. 3 and 4, each of the upper surface40 t (see FIG. 3) and the lower surface 40 b (see FIG. 4) of the sealingbody 40 has the plurality of side surfaces 40 s along the peripheraledge portion thereof.

The sealing body 40 is formed mainly of, e.g., a thermosetting resinsuch as, e.g., an epoxy-based resin. To improve the properties (e.g.,expansion property under the influence of heat) of the sealing body 40,filler particles such as, e.g., silica (silicon dioxide SiO₂) particlesmay also be mixed in the resin material.

<Mounting of Semiconductor Device>

Next, a description will be given of an electronic device in which thesemiconductor device PKG1 shown in FIGS. 3 to 6 is mounted over amounting substrate. FIG. 7 is an enlarged cross-sectional view of theperiphery of the portion of the electronic device having thesemiconductor device shown in FIGS. 3 to 6 mounted therein where thesemiconductor device is mounted. FIG. 8 is an enlarged cross-sectionalview of the portion A shown in FIG. 7. FIG. 9 is an enlargedcross-sectional view showing a state before the portion of the metalplate which is shown in FIG. 8 is mounted over the mounting substrate.FIG. 33 is an enlarged cross-sectional view showing a state where asemiconductor device is mounted over a mounting substrate in a studiedexample, which is provided for comparison with FIG. 7. FIG. 34 is anenlarged cross-sectional view of the portion A in FIG. 33.

An electronic device ED1 shown in FIG. 7 has a mounting substrate(mother board or wiring substrate) 50 and the semiconductor device PKG1mounted over an upper surface (surface or electronic component mountingsurface) 50 t of the mounting substrate 50.

The mounting substrate 50 has an insulating substrate 51 and a pluralityof terminals (lands) 52 arranged over the upper surface 50 t of theinsulating substrate 51. In the example shown in FIG. 7, the pluralityof terminals 50 of the mounting substrate 50 include a plurality ofterminals (lead-coupled terminals) 52 a to be coupled to the pluralityof respective leads 30 (see FIG. 3) and a terminal (metal-plate-coupledterminal) 52 b to be coupled to the metal plate 20. Each of theplurality of terminals 52 is made of, e.g., copper (Cu) or an alloymaterial containing, e.g., copper (Cu) as a main component.

The plurality of terminals 52 are coupled to the respective terminals ofthe semiconductor device PKG1 via the solder material 53. Specifically,the terminals 52 a are coupled to the respective leads 30 of thesemiconductor device PKG1 via the solder material 53. On the other hand,the terminal 52 b is coupled to the metal plate 20 of the semiconductordevice PKG1 via the solder material 53.

For example, the step of mounting the semiconductor device PKG1 over themounting substrate 50 is performed as follows. First, the mountingsubstrate 50 shown in FIG. 7 is provided. A paste-like solder material(the illustration thereof is omitted) is applied to each of theplurality of terminals 52 (solder material application step). Thepaste-like solder material is a solder material referred to as a soldercream and containing a flux component which activates the surface of thesolder material and a solder component.

Next, the semiconductor device PKG1 is placed over the mountingsubstrate 50 (semiconductor device placement step). At this time, asshown in FIG. 7, the semiconductor device PKG1 is placed over themounting substrate 50 such that portions of the lower surfaces 30 b ofthe leads 30 face the respective terminals 52 a and the lower surface 20b of the metal plate 20 faces the terminal 52 b.

As described above, the portions (exposed portions) of the leads 30 ofthe semiconductor device PKG1 which are exposed from the sealing body 40are covered with the metal films 32. Also, the portion (exposed portion)of the metal plate 20 which is exposed from the sealing body 40 iscovered with the metal film 22. Accordingly, in the semiconductor deviceplacement step, the portions of the metal films 32 covering the leads 30and the portion of the metal film 22 covering the metal plate 20 arebrought into close contact with the paste-like solder material describedabove.

Next, with the semiconductor device PKG1 being placed over the mountingsubstrate 50, the mounting substrate 50 is heated (reflow step). In thisstep, the paste-like solder material applied onto the mounting substrate50 is melted so that the flux component is lost. Each of the metal films32 and 22 is also melted. The respective top surfaces of the metal films32 and 22 come into contact with the flux component described above tobe activated. The melted solder component wet-spreads along the basematerial 31 of each of the leads 30 and the base material 21 of themetal plate 20. The solder component that has wet-spread is integratedwith the respective portions of the metal films 32 and 22 to form thesolder material 53 shown in FIG. 7.

As a result of conducting study, the present inventors have found that,in the structure of a semiconductor device PKGh1 shown in FIG. 33, along thin metal crystal shaped like and referred to as a whisker growsfrom a portion of a metal plate 20 h. It has been found that, even inthe case where, e.g., no whisker has been formed in the semiconductordevice PKGh1, when a temperature cycle load or a load such as repeatedexposure to a high-humidity environment is applied to the semiconductordevice PKGh1 after mounted over the mounting substrate 50, a whiskergrows. As described above, a whisker is a long thin whisker-shaped metalcrystal. Accordingly, when the whisker that has grown from the portionof the metal plate 20 h is broken and falls to the place around thesemiconductor device PKGh1, the whisker may form a conductive foreignsubstance. Therefore, in terms of improving the reliability of thesemiconductor device PKGh1, whisker formation is preferably suppressed.

The metal crystal shaped like and referred to as a whisker is known as amonocrystalline body which grows, when a plating film made of tin (Sn)containing no impurity is formed, outwardly from a portion of theplating film as a starting point. However, as a result of the study, thepresent inventors have found that, depending on the environmentalconditions under which the semiconductor device PKGh1 is stored or used,even when the plating film is made of an alloy material obtained byadding, e.g., bismuth (Bi) or the like to tin, a whisker may be formed.

As a result of conducting study, the present inventors have found that,when the thickness of a metal film 22 h as a plating film covering themetal plate 20 h is uneven, a whisker is likely to grow from the portionof the metal film 22 h which has a relatively large thickness as astarting point. Specifically, as shown in FIG. 34, the metal plate 20 hof the semiconductor device PKGh1 has a portion 22P1 having a relativelylarge thickness compared to the thickness of the surrounding portionwhich is formed at the boundary portion thereof between the side surface20 s 2 and the upper surface 20 t. It has also be found the whisker hasgrown from the portion 22P1 as a starting point. The length of thewhisker is larger as the thickness of the metal film 22 h is larger.

It can be considered that the portion 22P1 having the relatively largethickness, such as the portion 22P1 shown in FIG. 34, is formed for thefollowing reason. That is, when the metal film 22 h is formed around themetal plate 20 h by an electrolytic plating method, depending on theshape of the metal plate 20 h, a current density may be locallyconcentrated on a portion of the metal plate 20 h. It can be consideredthat, at the portion of the metal plate 20 h where the current densityis concentrated, the thickness of the plating film is larger than at theother portion thereof.

The present inventors have studied a method which reduces the thicknessof the entire plating film and thus reduces the thickness of the portion22P1 shown in FIG. 34 as a method of suppressing whisker formation.However, in this case, the thickness of the portion of the metal film 22h which is other than the portion 22P1 is reduced. This degrades thewettability of the solder material to the metal film 22 h. Accordingly,in terms of improving the reliability of the mounting strength, it isdifficult to use the method which reduces the thickness of the metalfilm 22 h.

From the foregoing findings, it can be considered that, as a method ofsuppressing the growth of a whisker, it is effective to reducevariations in the thickness of the metal film 22 covering the metalplate 20 shown in FIG. 6. To implement a method of reducing variationsin the thickness of the metal film 22, the present inventors have alsostudied the structure of the metal plate 20 which can inhibit, whenelectrolytic plating is performed, the current density from beingconcentrated. However, as described above, the metal film 22 has thefunction of improving the wettability of the solder when thesemiconductor device PKG1 is mounted over the mounting substrate 50.Accordingly, in terms of improving the mounting reliability of thesemiconductor device PKG1, it is preferable not to impair thewettability of the solder which is provided by the metal film 22.

First, of the metal film 22 h covering the base material 21 h of themetal plate 20 h shown in FIG. 34, the portion having a relatively largethickness compared to the thickness of the surrounding portion, such asthe portion 22P1, is present around the portion of the metal film 22 hwhere the side surface 20 s 2 and the upper surface 20 t cross eachother and around the portion of the metal film 22 h where the sidesurface 20 s and the lower surface 20 b cross each other. Note that, asshown in FIGS. 6 and 9, the metal film 22 covering the portion of themetal plate 20 included in the semiconductor device PKG1 in the presentembodiment which is exposed from the sealing body 40 is also formed witha portion 22P2 having a relatively large thickness compared to thethickness of the other portion thereof. Since each of FIGS. 33 and 34shows the state after the semiconductor device PKGh1 is mounted over themounting substrate 50, the portion 22P2 shown in FIG. 6 is not shown inFIGS. 33 and 34. However, in the case of the semiconductor device PKGh1also, the portion 22P2 shown in FIG. 6 is formed. Around the portion ofthe metal film 22 h shown FIG. 33 where the side surface 20 s 1 and thelower surface 20 b cross each other, a portion having a larger thicknesssuch as the portion 22P1 shown in FIG. 34 or the portion 22P2 shown inFIG. 6 was not recognized.

Note that, as shown in FIG. 7, the portion 22P2 shown in FIGS. 6 and 9is already a portion of the solder material when the semiconductordevice PKG is mounted over the mounting substrate 50. Consequently, evenwhen the portion 22P2 is formed, there is no possibility of whiskergrowth due to the portion 22P2. Also, even if a portion having a largerthickness, such as the portion 22P1 shown in FIG. 34 or the portion 22P2shown in FIG. 6, is formed around the portion of the metal film 22 hshown in FIG. 33 where the side surface 20 s 1 and the lower surface 20b cross each other, the portion having the larger thickness similarlybecomes a part of the solder material 53 shown in FIG. 33. As a result,even when a portion having a larger thickness is formed around theportion of the metal film 22 h shown in FIG. 33 where the side surface20 s 1 and the lower surface 20 b cross each other, the portion does notcause whisker formation.

In the metal film 32 covering the portion of the base material 31 ofeach of the leads 30 shown in FIG. 33 which is exposed from the sealingbody 40, a portion having a larger thickness, such as the portion 22P1shown in FIG. 34 or the portion 22P2 shown in FIG. 6, was notrecognized.

From the foregoing description, it has been seen that the portion of themetal film 22 h which particularly needs an approach to reducevariations in the thickness of the plating film as the cause of whiskergrowth is the periphery of the portion of the metal film 22 h shown inFIG. 34 where the side surface 20 s 2 and the upper surface 20 t crosseach other.

Next, a description will be given of an approach to inhibit a locallythicker portion from being formed in the metal film 22 h. The followingis one of conceivable reasons for the formation of the portion 22P1shown in FIG. 34 and whisker growth from the portion 22P1 as a startingpoint. That is, in the case of using a so-called electrolytic platingmethod when the metal film 22 h is formed, in the portion of the metalplate 20 h where the current density of a current flowing during thedeposition of the metal film 22 h locally increases, the depositionspeed of the metal film 22 h is higher than in the other portionthereof. Consequently, around the portion of the metal plate 20 h wherethe current density is locally higher, the thickness of the metal film22 h increases.

Also, in the case of the metal plate 20 h, the current densityparticularly tends to be higher in the portion of the metal plate 20 hwhere the side surface 20 s 2 and the upper surface 20 t cross eachother and in the portion of the metal plate 20 h where the side surface20 s 2 and the lower surface 20 b cross each other. In the case offorming the metal film 22 h by a so-called electrolytic plating methodin a plating step described later, a current flows in the metal plate 20h shown in FIG. 33. At this time, the current (or electrons) flows fromone of the side surfaces 20 s 1 and 20 s 2 to the other thereof. Inthose of the plurality of side surfaces of the metal plate 20 which arealong the direction of flow of the current (or electrons), the currentdensity tends to be relatively low. On the other hand, in those of theplurality of side surfaces of the metal plate 20 which cross thedirection of flow of the current (or electrons), the current densitytends to be relatively high. Accordingly, in the side surfaces 20 s 1and 20 s 2 among the plurality of side surfaces of the metal plate 20,the current density tends to be higher. In the distribution of thecurrent density in the side surface 20 s 2, the current density tends tobe higher in the peripheral edge portion of the side surface 20 s 2.When the angle formed between another surface continued to the sidesurface 20 s 2 and the side surface 20 s 2 is not more than degrees, thecurrent density particularly tends to be higher.

In addition, as the area of the side surface 20 s 2 is larger, thedegree to which the distribution of the current density varies ishigher. The area of the side surface 20 s 2 increases in proportion tothe thickness of the metal plate 20 h. Accordingly, as the thickness ofthe metal plate 20 h is increased so as to improve the heat dissipationproperty provided by the metal plate 20 h, the degree to which thecurrent density varies in the plating step increases.

Note that, of the side surfaces 20 s 1 and 20 s 2, the side surface 20 s1 is covered with the sealing body 40 so that, if the current densityincreases in the plating step, no particular problem arises. If thethickness of the metal film 22 h around the portion of the lower surface20 b which crosses the side surface 20 s 1 locally increases, thethicker portion is already a part of the solder material 53 after thesemiconductor device PKGh1 is mounted over the mounting substrate 50, asshown in FIG. 33. As a result, even when the thickness of a portion ofthe metal film 22 h locally increases over the mounting surface of thesemiconductor device PKGh1, the thicker portion does not cause whiskergrowth.

On the other hand, the side surface 20 s 2 is exposed from the sealingbody 40 shown in FIG. 33 and covered with the metal film 22 h. Since theportion 22P1 is less likely to be integrated with the solder material 53shown in FIG. 34, the portion 22P1 remains in most cases even after thesemiconductor device PKGh1 is mounted over the mounting substrate 50.Accordingly, it can be considered that the portion 22P1 oftentimesserves as a starting point from which a whisker grows.

On the basis of the result of the study shown above, the presentinventors have examined a configuration which suppresses theconcentration of the current density in a place where the currentdensity tends to be locally higher and found the configuration in thepresent embodiment. That is, as shown in FIG. 8, the upper surface 20 tof the metal plate 20 included in the semiconductor device PKG1 in thepresent embodiment has an exposed portion 20 tC exposed from the sealingbody 40 (see FIG. 6) and covered with the metal film 22. Between theexposed portion 20 tC and the side surface 20 s 2, an inclined surface20 p which is inclined with respect to each of the upper surface 20 tand the side surface 20 s 2 and covered with the metal film 22 isinterposed.

The inclined surface 20 p is a coining surface (pressed surface) formedby press working which presses, e.g., the portion of the side surface 20s 2 of the metal plate 20 which is closer to the upper surface 20 t andis provided so as to extend in the extending direction (X-direction inFIG. 3) of the side surface 20 s 2, as shown in FIG. 3. A working methodwhich thus removes the side where the two surfaces of a certain membercross each other is referred to as chamfering. Also, a method whichperforms chamfer working to interpose the inclined surface 20P betweentwo surfaces (the side surface 20 s 2 and the upper surface 20 t in theexample shown in FIG. 8) is referred to as “C-chamfering”. On the otherhand, as will be described later, a method which performs chamferworking to interpose a curved surface protruding toward the outside of amember between two surfaces is referred to as “R-chamfering”. In thepresent embodiment, the inclined surface 20 p as a C-chamfer is formedusing a method which crushes the side where two surfaces cross eachother to plastically deform the member for C chamfering.

The inclined surface 20 is inclined with respect to each of the uppersurface 20 t and the side surface 20 s 2. An angle θ1 formed between theupper surface 20 t and the inclined surface 20 p and an angle θ2 formedbetween the side surface 20 s 2 and the inclined surface 20 p are obtuseangles larger than 90 degrees. In the example shown in FIG. 8, therespective values of the angles θ1 and θ2 are equal to each other and135 degrees.

As shown in FIG. 8, when each of the angles θ1 and θ2 is an obtuse anglelarger than 90 degrees, around each of a side 20 m 1 where the uppersurface 20 t and the inclined surface 20 p cross each other and a side20 m 2 where the side surface 20 s 2 and the inclined surface 20 p crosseach other, the degree to which the current density is concentrated canbe reduced. Accordingly, the thickness of a portion (first thicknessportion) 22P3 of the metal film 22 which covers the inclined surface 20p of the base material 21 of the metal plate 20 is about the same as thethickness of the surrounding metal film 22. For example, the thicknessof the portion 22P3 of the metal film 22 is about the same as thethickness of the portion thereof which covers the upper surface 20 t.Also, the thickness of the portion 22P3 of the metal film 22 is aboutthe same as the thickness of the portion thereof which covers the sidesurface 20 s 2.

As described above, in the example shown in FIG. 8, the respectivevalues of the angles θ1 and θ2 are equal to each other and 135 degrees.However, as long as each of the angles θ1 and θ2 is obtuse, therespective values of the angles θ1 and θ2 may also be different fromeach other. As shown in FIG. 8, when the side surface 20 s 2 and theupper surface 20 t extend along respective directions (which are aZ-direction and the Y-direction in FIG. 8) orthogonal to each other, thesum of the angles θ1 and θ2 is 270 degrees. For example, when the angleθ1 is 95 degrees, the angle 82 is 175 degrees. However, when either oneof the angles θ1 and θ2 has a value close to 90 degrees, the currentdensity is likely to be concentrated on the angle close to 90 degrees.Accordingly, each of the angles θ1 and θ2 is preferably 105 to 165degrees. Also, each of the angles θ1 and θ2 is more preferably 120 to150 degrees. When each of the angles θ1 and θ2 is 135 degrees as shownin FIG. 8, the angles θ1 and θ2 can be maximized under the conditionthat the sum of the angles θ1 and θ2 is 270 degrees.

Also, as shown in FIG. 9, the side surface 20S of the metal plate 20included in the semiconductor device PKG1 in the present embodiment iscontinued to the lower surface 20 b covered with the metal film 22. Inother words, the side surface 20 s 2 and the lower surface 20 b of themetal plate 20 cross each other. The angle formed between the sidesurface 20 s 2 and the lower surface 20 b is, e.g., 90 degrees.Consequently, around a side 20 m 3 where the side surface 20 s 2 and thelower surface 20 b cross each other, the current density tends to belocally higher in the plating step described later. As a result, thethickness of the portion 22P2 of the metal film 22 which covers the side20 m 3 is larger than the thickness of the other portion thereof.Accordingly, in the present embodiment, the thickness of the portion22P3 covering the inclined surface 20 p is smaller than the thickness ofthe portion 22P2 covering the side 20 m 3.

In a modification of the present embodiment, an inclined surfaceequivalent to the inclined surface 20 p may also be interposed betweenthe side surface 20 s 2 and the lower surface 20 b. In this case, it ispossible to inhibit a portion having a relatively large thickness, suchas the portion 22P2 shown in FIG. 9, from being formed. However, asdescribed above, even when, e.g., the portion 22P2 is formed, theportion 22P2 is less likely to be a factor which causes whiskerformation. In the case of forming the inclined surface 20 p by pressworking, it is necessary to press the metal plate 20 under a highpressure. Accordingly, in the case of forming the inclined surface 20 pbetween each of the upper surface 20 t and the lower surface 20 b andthe side surface 20 s 2 of the metal plate 20, the level of difficultyof press working is high. Therefore, in terms of relatively easilyforming the inclined surface 20 p, as shown in FIGS. 6 to 9, the sidesurface 20 s 2 of the metal plate 20 is preferably continued to thelower surface 20 b covered with the metal film 22.

Also, as in the present embodiment, in the case of providing theinclined surface 20 p in terms of suppressing the concentration of thecurrent density in the plating step, the inclined surface 20 ppreferably has a dimension of not less than a given dimension. Forexample, a height (level difference) 2H1 of the inclined surface 20 p ispreferably larger than 10% of a thickness (plate thickness) 2T1 of thebase material 21 of the metal plate 20 shown in FIG. 9. Specifically,the height 2H1 between a side 20 m 1 where the inclined surface 20 p andthe upper surface 20 t cross each other and the side 20 m 2 where theinclined surface 20 p and the side surface 20 s 2 cross each other in adirection (Z-direction in FIG. 9) extending from one of the upper andlower surfaces 20 t and 20 b of the metal plate 20 toward the otherthereof is preferably larger than 10% of the thickness 2T1 as thedistance between the upper and lower surfaces 20 t and 20 b apart fromeach other. When the thickness of the base material 21 of the metalplate 20 shown in FIG. 9 is, e.g., 1 mm, the height 2H1 of the inclinedsurface 20 p in the thickness direction (Z-direction) is preferablylarger than 0.1 mm. Also, when the thickness of the base material 21 ofthe metal plate 20 shown in FIG. 9 is 500 μm, the height 2H1 of theinclined surface 20 p in the thickness direction (Z-direction) ispreferably larger than 50 μm. When the height 2H1 is larger than 10% ofthe thickness 2T1, the effect of reducing the likelihood of theformation of the portion 22P1 shown in FIG. 34 in the plating step canbe recognized.

The height 2H1 between the side 20 m 1 where the inclined surface 20 pand the upper surface 20 t cross each other and the side 20 m 2 wherethe inclined surface 20 p and the side surface 20 s 2 cross each otherin a direction (Z-direction in FIG. 9) extending from one of the upperand lower surfaces 20 t and 20 b of the metal plate 20 toward the otherthereof is more preferably not less than ¼ (not less than 25%) of thethickness 2T1 as the distance between the upper and lower surfaces 20 tand 20 b apart from each other. When the thickness of the base material21 of the metal plate 20 shown in FIG. 9 is, e.g., 1 mm, the height 2H1of the inclined surface 20 p in the thickness direction (Z-direction) ispreferably not less than 0.25 mm. Also, when the thickness of the basematerial 21 of the metal plate 20 shown in FIG. 9 is 500 μm, the height2H1 of the inclined surface 20 p in the thickness direction(Z-direction) is preferably not less than 125 μm. When the thickness 2H1is not less than ¼ of the thickness 2T1, the thickness of the portion22P1 shown in FIG. in the plating step can significantly be reduced.Accordingly, it is possible to stably suppress the whisker growthdescribed above.

Note that the magnitude of the dimension of the inclined surface 20 p isshown above as the ratio thereof to the thickness of the metal plate 20for the following reason. That is, the degree to which the currentdensity varies in the plating step in the vicinity of the side surface20 s 2 increases or decreases depending on the area of the side surface20 s 2 which is proportional to the height (level difference) betweenthe sides 20 m 2 and 20 m 3 shown in FIG. 9. Also, as shown in FIG. 5, awidth 2W1 of the side surface 20 s 2 in the X-direction is sufficientlylarger than (e.g., not less than ten times) the height 2H2 shown in FIG.9 in plan view. Accordingly, when the thickness 2T1 shown in FIG. 9 islarge, the area of the side surface 20 s 2 increases in proportionthereto and therefore the height 2H1 of the inclined surface 20 pprovided to suppress the concentration of the current density needs tobe larger. Conversely, when the thickness 2T1 shown in FIG. 9 is small,the area of the side surface 20 s 2 decreases in proportion thereto. Asa result, even when the height 2H1 of the inclined surface 20 p providedto suppress the concentration of the current density is small, theeffect of suppressing the concentration of the current density can beobtained.

When the height 2H1 of the inclined surface 20 p is in a range of notless than ¼ of the thickness 2T1 of the base material 21 of the metalplate 20, the effect of suppressing whisker formation shows nosignificant change. To be exact, when the height 2H1 extremely increasesand the height 2H2 of the side surface 20 s 2 decreases, the currentdensity is more likely to be concentrated. However, in this case, thecurrent density is more likely to be concentrated on the vicinity of thelower surface 20 b. Even when the thickness of the metal film 22increases in the vicinity of the lower surface 20 b, as shown in FIG. 7,the thicker portion of the metal film 22 is already a part of the soldermaterial 53 when the semiconductor device PKG1 is mounted over themounting substrate 50. Accordingly, in terms of inhibiting the growth ofa whisker, the effect shows no big difference when the height 2H1 of theinclined surface 20 p is in a range of not less than ¼ of the thickness2T1 of the base material 21 of the metal plate 20.

On the other hand, when consideration is given to the efficiency of theoperation of shaping the inclined surface 20 p, as the height 2H1 of theinclined surface 20 p is reduced, a load on press working can bereduced. Accordingly, when consideration is given also to the efficiencyof the operation of shaping the inclined surface 20 p, the height 2H1 ofthe inclined surface 20 p is more preferably ¼ of the thickness 2T1 ofthe base material 21 of the metal plate 20.

Of the metal plate 20 included in the semiconductor device PKG1 in thepresent embodiment, the portion exposed from the sealing body 40 shownin FIG. 3 has a portion uncovered with the metal film 22 (see FIG. 6).FIG. 10 is a side view obtained by viewing the semiconductor deviceshown in FIG. 3 from the inclined surface of the metal plate. FIG. is across-sectional view along the line B-B in FIG. 3. FIG. 12 is across-sectional view along the line C-C in FIG. 3. Note that FIG. 10 isa side view but, to clearly show the positions of the side surfaces 20 s3 and 20 s 4 exposed from the metal film 22 (see FIG. 11), the sidesurfaces 20 s 3 and 20 s 4 are hatched.

As shown in FIG. 10, the plurality of side surfaces 20 s of the metalplate 20 include the side surface 20 s 3 continued to one end portion ofeach of the side surface 20 s 2 and the inclined surface 20 p and theside surface 204 continued to the other end portion of each of the sidesurface 20 s 2 and the inclined surface 20 p. Each of the side surfaces20 s 3 and 20 s 4 is continued to the upper surface 20 t of the metalplate 20 and exposed from the sealing body 40 and the metal film 22 (seeFIG. 11).

The side surfaces 20 s 3 and 20 s 4 shown in FIGS. 10 and 11 are cutsurfaces formed by cutting a portion of the metal plate 20 in a tie barcut step after the plating step described later. Accordingly, the sidesurfaces 20 s 3 and 20 s 4 are not covered with the metal film 22.

Note that a major part of each of the side surfaces 20 s 3 and 20 s 4 isexposed from the metal film 22. However, depending on a working methodin forming the side surfaces 20 s 3 and 20 s 4, the metal film 22 drawnfrom another surface may be deposited over a portion of each of the sidesurfaces 20 s 3 and 20 s 4 during cutting.

As shown in FIG. 11, at the side surfaces 20 s 3 and 20 s 4 exposed fromthe metal film 22, the whisker described above is not formed. Therefore,between each of the side surfaces 20 s 3 and 20 s 4 and the uppersurface 20 t, an inclined surface equivalent to the inclined surface 20p shown in FIG. 10 need not be interposed. Consequently, as shown inFIG. 11, each of the side surfaces 20 s 3 and 20 s 4 is continued to theupper surface 20 t of the metal plate 20. In other words, the sidesurface 20 s 3 and the upper surface 20 t cross each other and the sidesurface 20 s 4 and the upper surface 20 t cross each other. In the casewhere an inclined surface equivalent to the inclined surface 20 p shownin FIG. 10 is thus not interposed between each of the side surfaces 20 s3 and 20 s 4 and the upper surface 20 t, the efficiency of the workingoperation can be increased when the metal plate 20 is worked to beformed with the inclined surface 20 p.

As shown in FIG. 3, the plurality of side surfaces 20 s of the metalplate 20 include the side surface 20 s 5 continued to the end portion ofthe side surface 20 s 3 and having a portion exposed from the sealingbody 40 and a side surface 20 s 6 continued to the end portion of theside surface 20 s 4 and having a portion exposed from the sealing body40. Also, as shown in FIG. 4, each of the side surfaces 20 s 5 and 20 s6 is disposed between the side surfaces 20 s 1 and 20 s 2 in plan view.Also, as shown in FIG. 12, each of the side surfaces 20 s 5 and 20 s 6is covered with the metal film 22.

As shown in FIG. 12, the side surface 20 s 5 is continued to the uppersurface 20 t and the side surface 20 s 6 is continued to the uppersurface 20 t. In other words, the side surface 20 s 5 and the uppersurface 20 t cross each other and the side surface 20 s 6 and the uppersurface 20 t cross each other. In the example shown in FIG. 12, the sidesurface 20 s 5 and the upper surface 20 t are orthogonal to each otherand the side surface 20 s 6 and the upper surface 20 t are orthogonal toeach other. In this case, it can be considered that, on each of thevicinity of a side 20 m 4 where the side surface 20 s 5 and the uppersurface 20 t cross each other and the vicinity of a side 20 m 5 wherethe side surface 20 s 6 and the upper surface 20 t cross each other, thecurrent density may be concentrated in the plating step.

However, as described above, the place at which the concentration of thecurrent density is likely to occur is the peripheral edge portion of theside surface 20 s 2 (see FIG. 9) where the direction in which thecurrent flows suddenly changes. As a result, the current density is morelikely to be concentrated on the vicinity of each of the sides 20 m 4and 20 m 5 shown in FIG. 12 than on the vicinity of the side 20 m 3shown in FIG. 9. Accordingly, even when the sides 20 m 4 and 20 m 5 arecovered with the metal film 22, variations are less likely to occur inthe thickness of the metal film 22. Therefore, in the example shown inFIG. 12, an inclined surface equivalent to the inclined surface 20 pshown in FIG. 9 is interposed neither between the side surface 20 s 5and the upper surface 20 t nor between the side surface 20 s 6 and theupper surface 20 t.

In the case where an inclined surface equivalent to the inclined surface20 p shown in FIG. 9 is thus interposed neither between the side surface20 s 5 and the upper surface 20 t nor between the side surface 20 s 6and the upper surface 20 t, when the inclined surface 20 p is formed byworking the metal plate 20, the efficiency of the working operation canbe increased.

However, on the vicinity of each of the sides 20 m 4 and 20 m 5 shown inFIG. 12, the current density may be more highly concentrated than on,e.g., the middle region between the sides 20 m 4 and 20 m 5.Accordingly, in a modification of the present embodiment, respectiveinclined surfaces equivalent to the inclined surface 20 p shown in FIG.9 may also be interposed between the side surface 20 s 5 and the uppersurface 20 t and between the side surface 20 s 6 and the upper surface20 t in the same manner as in a semiconductor device PKG3 shown in FIGS.29 to 31 and described later.

<Method of Manufacturing Semiconductor Device>

Next, a description will be given of the manufacturing process of thesemiconductor device PKG1 described using FIGS. 1 to 12. Thesemiconductor device PKG1 is manufactured along the flow shown in FIG.13. FIG. 13 is an illustrative view showing the outline of themanufacturing process of the semiconductor device described using FIGS.1 to 12.

<Lead Frame Provision Step>

First, in the lead frame provision step shown in FIG. 13, a lead frameLF shown in FIGS. 14 to 16 is provided. FIG. is an enlarged plan viewshowing a portion of the lead frame provided in the lead frame provisionstep shown in FIG. 13. FIG. 15 is an enlarged plan view of one of thedevice formation portions shown in FIG. 14. FIG. 16 is an enlargedcross-sectional view along the line A-A in FIG. 15. FIG. 17 is anenlarged perspective view showing an example of the shape of a materialplate shaped in the material plate shaping step shown in FIG. 13. FIG.18 is an enlarged perspective view showing an example of a state where agroove is formed in the material plate shown in FIG. 17 by pressworking. FIG. 19 is an enlarged cross-sectional view showing a statewhere a portion of the material plate is removed by press working in thepatterning step shown in FIG. 13.

As shown in FIG. 14, the lead frame LF provided in this step includes aplurality of device formation portions LFd coupled to a frame portionLFf. FIG. 14 shows the eight device formation portions LFd. Each of thedevice formation portions LFd corresponds to the one semiconductordevice PKG1 shown in FIG. 5. The lead frame LF is a so-calledmulti-piece base material in which the plurality of device formationportions LFd are arranged in rows and columns. By thus using the leadframe LF including the plurality of device formation portions LFd, aplurality of the semiconductor devices PKG1 (see FIG. 3) cansimultaneously be manufactured to allow an improvement in manufacturingefficiency. FIG. 14 shows an example in which the plurality of deviceformation portions LFd are arranged in two rows along the X-direction.However, the number of the rows in which the device formation portionsLFd are arranged has various modifications. The number of the rows inwhich the device formation portions LFd are arranged may be, e.g., oneor three or more. However, in terms of the ease of shaping of a materialplate (see FIG. 17) LFB, the device formation portions LFd arepreferably arranged in two rows, as shown in FIG. 14.

The lead frame LF is made of a metal material containing, e.g., copper(Cu) as a main component. The thickness of the portion of the metalplate 20 is, e.g., about 400 μm to 2 mm, while the thickness of theother portion thereof is, e.g., about 125 μm to 400 μm.

Each of the plurality of device formation portions LFd is coupled to theframe portion LFf. The frame portion LFf is a supporting portion whichsupports each of the members formed in the device formation portions LFdtill the lead separation step shown in FIG. 13.

Also, as shown in FIGS. 15 and 16, in the device formation portion LFd,the metal plate 20 and the plurality of leads 30 which have beendescribed using FIGS. 3 to 12 are formed. The metal plate 20 isconnected to the frame portion LFf via one of the plurality of leads 30and supported by the frame portion LFf. Also, each of the plurality ofleads 30 is connected to and supported by the frame portion LFf andsupported by the frame portion LFf.

The plurality of leads 30 are connected to each other via a tie barLFt1. In the example shown in FIGS. 14 and 15, a plurality of the metalplates 20 are connected to each other via a tie bar LFt2. As shown inFIG. 15, the tie bar LFt2 is disposed over the end portion of the deviceformation portion LFd which is opposite to the plurality of leads 30 andincludes the side surface 20 s 2 opposite to the side surface 20 s 1facing the plurality of leads 30. The tie bar LFt2 is also formed withthe inclined surface 20 p.

For example, the lead frame LF shown in FIGS. 14 to 16 are manufacturedas follows. That is, in the material plate shaping step shown in FIG.13, a metal material is shaped as shown in FIG. 17 to form the materialplate LFB having a plurality of portions having different thicknesses.The material plate LFB has portions LF1 each having a relatively smallthickness and a portion LF2 having a thickness smaller than those of theportions LF1. The thickness of each of the portions LF1 corresponds tothe thickness of the base material 31 of each of the leads 30 shown inFIG. 6. Also, the thickness of the portion LF2 corresponds to thethickness of the base material 21 of the metal plate 20 shown in FIG. 6.However, at the stage at which the material plate shaping step has beencompleted, the thickness of each of the portions LF1 and the thicknessof the base material 31 of each of the leads 30 need not be equal toeach other, while the thickness of the portion LF2 and the thickness ofthe base material 21 of the metal plate 20 need not be equal to eachother.

As a method of forming the portions LF1 and LF2 of the material plateLFB, e.g., roll working, press working, or both of roll working andpress working for a metal material can be used.

Also, in the example shown in FIG. 17, in the portion LF2 of thematerial plate LFB, a groove LFT is formed. The groove LFT is a portioncorresponding to the inclined surface 20 p of the metal plate 20 shownin FIG. 9 and is formed by, e.g., press working using die plates 60, asshown in FIG. 18. In the example shown in FIG. 18, the groove LFT of thematerial plate LFB is formed by placing the material plate LFB betweenthe die plates 60 disposed to face the material plate LFB and causingthe material plate LFB to be held and pressed between the die plates 60.

Next, in the patterning step shown in FIG. 13, the material plate LFBshown in FIG. 17 is subjected to a patterning process to form the leadframe LF shown in FIG. 14. In the patterning step, the material plateLFB is patterned by removing a portion of the material plate LFB suchthat such portions as the metal plate 20, the plurality of leads 30, theframe portions LFf, and the tie bar LFt2 each shown in FIG. 15 havepredetermined shapes. A method of removing a portion of the materialplate LFB may be, e.g., press working, etching, or a combinationthereof. In the case of performing patterning by etching, the sidesurface 20 s 2 shown in FIG. 9 is likely to have a curved surface.Accordingly, the patterning process for the portion LF2 corresponding tothe metal plate 20 shown in FIG. 9 is preferably press working using adie. In the case of forming the entire lead frame LF by press working,the metal plate 20 and the portions other than the metal plate 20 canalso be formed simultaneously. The inclined surface 20 p of the metalplate 20 shown in FIG. 9 is formed by press working in the materialplate shaping step or the patterning step shown in FIG. 13.

As can be seen from the comparison between FIGS. 17 and 14, in theexample of the patterning step shown in the present embodiment, aportion of the groove LFT shown in FIG. 17 is removed along theextending direction of the groove LFT to divide the material plate LFBinto two rows. At this time, in the case of removing a portion of thegroove LFT (see FIG. 17) by press working using a die 61 including apunch 61P and a die 61D as illustrated in, e.g., FIG. 19, a small curvedsurface may be formed along the peripheral edge portion of the sidesurface 20 s 2 due to the clearance between the punch 61P and the die61D. For example, in the case of pressing the punch 61P from the uppersurface 20 t of the metal plate against the lower surface 20 b thereof,a small curved surface may be formed at the boundary between the sidesurface 20 s 2 and the inclined surface 20 p. Conversely, in the case ofpressing the punch 61P from the lower surface 20 b of the metal plate 20against the upper surface 20 t thereof, a small curved surface may beformed at the boundary between the lower surface 20 b and the sidesurface 20 s 2.

However, according to the study by the present inventors, the radius ofcurvature of the curved surface thus formed due to the clearance duringthe press working is about several micrometers to several tens ofmicrometers, which is less than 5% of the thickness of the metal plate20. Accordingly, it has been found that the effect of suppressing theconcentration of the current density in the plating step cannotsubstantially be expected at the curved surface formed due to theclearance during the press working.

In the example shown in FIG. 19, the punch 61P moves from the uppersurface 20 t of the metal plate 20 toward the lower surface 20 bthereof. In this case, a stress when a portion of the material plate LFBis cut is applied to the lower surface 20 b so that the inclined surface20 p is less likely to be deformed under the influence of the pressworking. However, in a modification, the punch 61P may also move fromthe lower surface 20 b of the metal plate 20 toward the upper surface 20t thereof.

Note that, after the material plate shaping step or the patterning stepshown in FIG. 13, it may also be possible to partially or entirely platethe material plate LFB (see FIG. 17) and form, e.g., a nickel (Ni)plating film, a copper (Cu) plating film, or a silver (Ag) plating film,though not shown in FIG. 13. By forming such a plating film, thestrength of the coupling between the die bonding material 11 and themetal plate 20 shown in FIG. 6 or the strength of the coupling betweenthe wires 12 and the leads 30 shown in FIG. 5 can be improved.

<Semiconductor Chip Mounting Step>

Next, in the semiconductor chip mounting step shown in FIG. 13, as shownin FIG. 20, the semiconductor chip 10 is mounted over the metal plate 20of the lead frame LF. FIG. is an enlarged plan view showing a statewhere the semiconductor chip is mounted over the die pad shown in FIG.15.

In this step, the semiconductor chip 10 is mounted over the uppersurface 20 t of the metal plate 20 formed integrally with the lead 30Das the drain terminal via the die bonding material 11. As shown in FIG.6 already described, the semiconductor chip 10 is bonded and fixed suchthat the back surface 10 b formed with the drain electrode DE faces theupper surface 20 t of the metal plate 20 as the chip mounting surfacevia the die bonding material 11. As a result, the source electrode padSE and the gate electrode pad GE of the semiconductor chip 10 areexposed, as shown in FIG. 20. On the other hand, as shown in FIG. 6, thedrain electrode DE of the semiconductor chip 10 is electrically coupledto the metal plate 20 via the die bonding material 11 as the conductivecoupling material.

In this step, after the die bonding material 11 is applied onto theupper surface 20 t of the metal plate 20, the semiconductor chip 10 isplaced over the die bonding material 11. Then, by curing the die bondingmaterial, the semiconductor chip 10 is fixed to the metal plate 20.

As the die bonding material 11, e.g., a solder material may also beused. Alternatively, the die bonding material 11 may also be aconductive resin adhesive material referred to as a so-called silver(Ag) paste including a plurality of silver (Ag) grains (Ag filler). Whenthe die bonding material 11 is a solder material, as a method of curingthe die bonding material, a reflow process is performed. Alternatively,when the die bonding material 11 is the conductive resin adhesivematerial, the thermosetting resin component included in the die bondingmaterial 11 is heated to be cured.

Note that a metal film (the illustration thereof is omitted) havinghigher adhesion to the die bonding material than that of copper (Cu) ora copper alloy as the base material of the metal plate 20 may also beformed over a portion of the upper surface 20 t of the metal plate 20,though the illustration thereof is omitted. This can improve theadhesion strength between the die bonding material 11 and the metalplate 20.

<Wire Bonding Step>

In the wire boding step shown in FIG. 13, as shown in FIG. 21, theplurality of electrode pads of the semiconductor chip 10 areelectrically coupled respectively to the plurality of leads 30 via thewires (metal wires) 12. FIG. is an enlarged plan view showing a statewhere the semiconductor chip shown in FIG. 20 is electrically coupled tothe gate lead via the metal wire.

In this step, the gate electrode pad GE of the semiconductor chip 10 iselectrically coupled to the lead 30G via the wire 12 g. Also, in thisstep, the source electrode pad SE of the semiconductor chip 10 iselectrically coupled to the lead 30S via the wire 12 s. As a method ofcoupling the wires 12, various modifications can be used. For example,using a wire bonding tool not shown, each of the wires 12 is thermallycompressed with an ultrasonic wave being applied to the respectivecoupled portions of the wire 12 and the electrode pad or the lead 30.

In the example shown in FIG. 21, the diameter of the wire 12 s is largerthan the diameter of the wire 12 g. This can increase thecross-sectional area of the wiring path coupled to the source electrodepad SE. However, the respective thicknesses of the plurality of wires 12may also be the same. Alternatively, the source electrode pad SE of thesemiconductor chip 10 may also be electrically coupled to the lead 30Svia a plurality of the wires 12 s.

<Sealing Step>

Next, in the sealing step shown in FIG. 13, the semiconductor chip 10, aportion of the metal plate 20, respective portions of the plurality ofleads 30, and the plurality of wires 12 which are shown in FIG. 21 aresealed with an insulating resin to form the sealing body 40 shown inFIG. 22. FIG. 22 is an enlarged plan view showing a state where thesealing body sealing the semiconductor chip and the wires which areshown in FIG. 21 is formed. FIG. 23 is an enlarged cross-sectional viewshowing a state where the lead frame is placed in a mold in a crosssection along the line A-A in FIG. 22.

In this step, as shown in FIG. 23, e.g., the sealing body 40 is formedby a so-called transfer mold method using a mold 62 including a topplate (first plate) 62T and a bottom plate (second plate) 62B.

In the example shown in FIG. 23, the lead frame LF is placed such thatthe metal plate 20 and the respective portions of the plurality of leads30 in the device formation portion LFD are located in a cavity 62Cformed between the top and bottom plates 62T and 62B. Then, the leadframe LF is clamped by (held between) the top and bottom plates 62T and62B. When a softened (plasticized) thermosetting resin (insulatingresin) is pressed into the cavity 62C of the mold 62 in this state, theinsulating resin is supplied into the space formed by the cavity 62C andthe bottom plate 62B and molded into the shape of the cavity 62C.

At this time, as shown in FIG. 23, a portion (exposed portion 20 tC) ofthe upper surface 20 t of the metal plate 20 which is continued to theinclined surface 20 p is pressed by the top plate 62T. In the exampleshown in FIG. 23, the portion (exposed portion 20 tC) of the uppersurface 20 t of the metal plate 20 which is continued to the inclinedsurface 20 p is in close contact with the top plate 62T. On the otherhand, the lower surface 20 b of the metal plate 20 is pressed by thebottom plate 62B. In the example shown in FIG. 23, the entire lowersurface 20 b of the metal plate 20 is in close contact with the bottomplate 62B. As a result, as shown in FIG. 23, after this step, a portionof the metal plate 20 including the inclined surface 20 p and the sidesurface 20 s 2 is exposed from the sealing body 40.

The sealing body 40 is formed mainly of the insulating resin but, bymixing filler particles such as, e.g., silica (silicon dioxide SiO₂)particles in the thermosetting resin, the function (e.g., resistance towarping deformation) of the sealing body 40 can be improved.

<Plating Step>

Next, in the plating step shown in FIG. 13, as shown in FIG. 24, thelead frame LF is immersed in a plating solution not shown to allow themetal film 22 to be formed over the top surface of the metal portionexposed from the sealing body 40. FIG. 24 is an enlarged cross-sectionalview showing a state where a metal film (plating film) is formed overthe surface of the lead frame shown in FIG. 22 which is exposed from thesealing body. FIG. 25 is an illustrative view showing the outline of theplating step in accordance with an electrolytic plating method. Notethat, in FIG. 24, an example of the direction in which electrons flow inthe plating step is schematically shown by the arrow. The direction inwhich a current flows in the plating step is opposite to the directionin which electrons flow.

In this step, the metal films 22 and 32 (see FIG. 24) made of, e.g., asolder are formed over the top surface of the metal member exposed fromthe resin by an electrolytic plating method. In the electrolytic platingmethod, as shown in FIG. 25, the lead frame LF as a target object to beplated is placed in a plating tank 65T containing a plating solution65PL. At this time, the target object is coupled to a cathode 65N in theplating tank 65T. For instance, in the example shown in FIG. 25, theframe portion LFf of the lead frame LF is electrically coupled to thecathode 65N. Then, for example, a dc voltage is applied between thecathode 65N and an anode 65P similarly placed in the plating tank 65T toform the metal films 22 and 32 (see FIG. 24) over the exposed surfacesof the metal members coupled to the frame portion LFf of the lead frameLF. That is, in the present embodiment, the metal films 22 and 32 areformed by a so-called electrolytic plating method.

Note that, in the plating step, before the lead frame LF is immersed inthe plating solution 65PL shown in FIG. 25, chemical polishing may alsobe performed as pretreatment on the respective top surfaces of the metalplate 20 and the leads 30 shown in FIG. 24. By performing thepretreatment before the lead frame LF is immersed in the platingsolution 65PL, it is possible to remove, e.g., an oxide film over thetop surface of the lead frame LF exposed from the sealing body 40 (seeFIG. 24) or minute burrs.

The metal films 22 and 32 in the present embodiment are made of aso-called lead-free solder which does not substantially contain lead(Pb). Examples of the lead-free solder include a pure tin (Sn) solder, atin-bismuth (Sn—Bi) solder, and a tin-copper-silver (Sn—Cu—Ag) solder.

Accordingly, the plating solution 65PL used in this plating step is anelectrolytic plating solution containing a metal salt such as, e.g.,Sn²⁺ or Bi³⁺. Note that the following description will be given of aSn—Bi alloyed metal plating as an example of a lead-free solder plating.However, it is possible to replace the plating solution 65PL with anelectrolytic plating solution in which bismuth (Bi) is replaced with ametal such as copper (Cu) or silver (Ag) or which also contains copper(Cu) or silver (Ag) in addition to bismuth (Bi).

In the present embodiment, the plating step is performed in a statewhere the metal plate 20 is electrically coupled to the frame portionLFf via the leads 30. When a voltage is applied between the anode 65Pand the cathode 65N which are shown in FIG. 25 in a state where the leadframe LF is immersed in the plating solution 65PL, conduction isprovided between the leads 30 and the metal plate 20, which are coupledto the cathode 65N, and the anode 65P through the plating solution 65PL.At this time, Sn²⁺ and Bi³⁺ in the plating solution 65PL precipitate ina predetermined proportion at the respective surfaces of the leads 30and the metal plate 20 which are exposed from the sealing body 40 toform the metal films 22 and 32 shown in FIG. 24. The respectivethicknesses of the metal films 22 and 32 can be varied in accordancewith the specifications of products. For example, films havingthicknesses of about 7 μm to 15 μm are deposited as the metal films 22and 32.

As shown in FIG. 25, in the case of forming the metal films 22 and 32(see FIG. 24) by an electrolytic plating method, a current flows in theleads 30 of the lead frame LF and in the metal plate 20. For instance,in the example shown in FIG. 24, a direction FLe in which electrons flowin the plating step extends from the side surface 20 s 1 toward the sidesurface 20 s 2 in the metal plate 20. In other words, in the exampleshown in FIG. 24, a current flows from the side surface 20 s 2 of themetal plate 20 toward the side surface 20 s 1 thereof. In the case ofusing the electrolytic plating method, the speeds at which the metalfilms 22 and 32 precipitate differ depending on the current density.Specifically, the metal films 22 and 32 tend to have larger thicknessesaround the portion where the current density is high.

The current density tends to be relatively low in those of the pluralityof side surfaces of the metal plate 20 which are along the direction inwhich a current (or electrons) flows. On the other hand, the currentdensity tends to be relatively high in those of the plurality of sidesurfaces of the metal plate 20 which cross the direction in which acurrent (or electrons) flows. Accordingly, in the side surfaces 20 s 1and 20 s 2 among the plurality of side surfaces of the metal plate 20,the current density particularly tends to be higher.

When the distribution of the current density in the side surface 20 s 2is examined, the current density tends to be higher in the peripheraledge portion of the side surface 20 s 2. Also, in the part of theportion of the metal plate 20 which is exposed from the sealing body 40which has an angle of not more than 90 degrees, the current densitytends to be higher. For example, as has been described using FIG. 34, inthe case where the side surface 20 s 2 is continued to the upper surface20 t and the angle formed between the side surface 20 s 2 and the uppersurface 20 t is not more than 90 degrees, the current densityparticularly tends to be higher in the vicinity of the side where theside surface 20 s 2 and the upper surface 20 t cross each other. As aresult, in the vicinity of the side where the side surface 20 s 2 andthe upper surface 20 t cross each other, a portion 22P1 having arelatively large thickness is formed in the metal film 22 h.

On the other hand, in the present embodiment, as has been describedusing FIGS. 8 and 9, the inclined surface 20 p interposed between theside surface 20 s 2 and the upper surface 20 t is formed before theplating step. Consequently, each of the angles θ1 and θ2 shown in FIG. 8is an obtuse angle larger than 90 degrees. As a result, in the presentembodiment, it is possible to inhibit a locally thicker portion, such asthe portion 22P1 shown in FIG. 34, from being formed in the platingstep. Note that, in the case in the present embodiment, the side surface20 s 2 and the lower surface 20 b which are shown in FIG. 24 cross eachother at an angle of, e.g., not more than 90 degrees. Accordingly, ashas been described using FIG. 9, the current density tends to be locallyhigher around the side 20 m 3 where the side surface 20 s 2 and thelower surface 20 b cross each other in the plating step. As a result,the portion 22P2 of the metal film 22 which covers the side 20 m 3 isthicker than the other portion thereof.

The current density also tends to be higher in the side surface LFsamong the plurality of side surfaces of the frame portion LFf shown inFIGS. 22 and 24 which is located along the peripheral edge portion ofthe lead frame LF for the same reason as in the side surface 20 s 2 ofthe metal plate 20. In the vicinity of the corner portions locatedaround the region of the side surface LFs which crosses the uppersurface and around the region of the side surface LFs which crosses thelower surface, relatively thicker portions are formed in the metal film22. However, in the lead separation step shown in FIG. 13, the frameportion LFf having the side surface LFs shown in FIG. 26 is separatedand removed from the plurality of leads 30. Accordingly, the metal film32 formed over the side surface LFs has no influence on thesemiconductor device in the final structure.

<Metal Plate Separation Step>

Next, in the metal plate separation step shown in FIG. 13, the tie barLFt2 shown in FIG. 22 is cut to separate the plurality of metal plates20 connected via the tie bar LFt2 from each other. In this step, the tiebar LFt2 is cut along cut lines 66L shown as the dotted lines in FIG. 26to separate the metal plates 22 from the tie bar LFt2. FIG. 26 is anenlarged plan view schematically showing the positions where the tie baris cut in the metal plate separation step shown in FIG. 13. Note that,in FIG. 26, the cutting positions where the tie bar LFt2 is cut in themetal plate separation step is shown by the cut lines 66L as the dottedlines. Also, in FIG. 26, the positions where the tie bar LFt1 is cut inthe next lead separation step are shown by cut lines 67L as the dot-dashlines. Also, in FIG. 26, the respective positions where the plurality ofleads 30 are cut in the next lead separation step are shown by a cutline 68L as the two-dot-dash line.

In this step, as shown in FIG. 26, the tie bar LFt2 is cut along the cutlines 66L. As a method of cutting the tie bar LFt2, in the same manneras in the method described using FIG. 19, press working using a punchand a die can be used. When the tie bar LFt2 is cut along the cut lines66L, the side surfaces 20 s 3 and 20 s 4 described using FIGS. 10 and 11are formed. Since this step is performed after the plating step, theside surfaces 20 s 3 and 20 s 4 are exposed from the metal film 22.However, in this step, the tie bar LFt2 is cut with the top surfacethereof being covered with the metal film 22 shown in FIG. 24.Accordingly, portions of the metal film 22 may also be deposited overrespective portions of the side surfaces 20 s 3 and 20 s 4.

As also shown in FIG. 26, each of the plurality of cut lines 66L extendsover a portion of the upper surface 20 t of the metal plate 20 and overa portion of the inclined surface 20 p. Consequently, each of the sidesurfaces 20 s 3 and 20 s 4 is continued to the upper surface 20 t and tothe inclined surface 20 p.

<Lead Separation Step>

Next, in the lead separation step shown in FIG. 13, the tie bar LFt1 iscut along the cut lines 67L shown as the dot-dash lines in FIG. 26 andthe plurality of leads 30 are cut from the frame portion LFf along thecut line 68L shown as the dotted line in FIG. 26 to be separated fromeach other. Also, in this step, the plurality of leads 30 are eachsubjected to bending to be shaped so that the leads 30 having shapes asshown in, e.g., FIG. 6 are obtained. As a method of cutting the tie barLFt1 and a method of cutting the plurality of leads 30, in the samemanner as in the method described using FIG. 19, press working using apunch and a die can be used. Also, as a method of shaping the leads 30,e.g., press working using the die described using FIG. 18 can be used.

Note that the cutting of the tie bar LFt1, the cutting of the pluralityof leads 30, and the shaping of the leads 30 may be performedindependently or some or all thereof may also be performedsimultaneously.

<Annealing Step>

Next, in the annealing step shown in FIG. 13, heating treatment (annealtreatment) is performed on the metal films 22 and 32 (see FIG. 24)formed in the plating step described above to reduce a strain in each ofthe metal films 22 and 32. As exemplary conditions for the annealtreatment, conditions under which, e.g., heating is performed at 150° C.for about 1 to 2 hours can be shown. In a modification of the presentembodiment, the annealing step can also be omitted. However, asdescribed later, as a result of conducting the study, the presentinventors have found that performing the anneal treatment on the metalfilms 22 and 32 is effective in terms of suppressing whisker formation.

Note that, in FIG. 13, the implementation which performs the annealingstep after the lead separation step is shown. However, in amodification, the lead separation step may also be performed after theannealing step. In the case of performing the annealing step after thelead separation step, the strain produced in the metal film 32 (see FIG.6) in the lead separation step can be removed by the annealing step. Onthe other hand, in the case of performing the lead separation step afterthe annealing step, the annealing step can be performed in a state wherethe plurality of device formation portions LFd (see FIG. 14) areconnected, resulting in high handling performance. Even in the case ofperforming the lead separation step after the annealing step, the strainproduced in the metal film 22 to result in the main cause of whiskerformation (see FIG. 16) can be removed.

<Evaluation>

A description will be given of the result of evaluating thesemiconductor device in the present embodiment described above for thewettability of the solder during the mounting thereof and the length ofa whisker. Table 1 shows the results of evaluating the semiconductordevice PKGh1 shown in FIG. 33 and the semiconductor device PKG1 shown inFIG. 8 for the wettability of the solder during the mounting thereof andthe length of a whisker. Table 2 shows the result of evaluation whenconditions for pretreatment before the plating step or the timing ofperforming the annealing step are varied as modifications of theconditions shown in Table 1. FIG. 27 is an illustrative view showing astandard on the basis of which the length of a whisker is measured inthe evaluation of whiskers shown in Tables 1 and 2.

In the semiconductor device PKG1 shown in Table 1, the inclined surface20 p having the thickness 2T1 of 1 mm and the height 2H1 of 250 μm andshown in FIG. 9 was formed. On the other hand, the semiconductor PKGh1was formed such that the thickness thereof corresponding to the distancebetween the upper surface 20 t and the lower surface 20 b shown in FIG.34 was 1 mm. For each of the semiconductor devices PKG1 and PKGh1, aspretreatment for the plating step, chemical polishing was performed onthe respective top surfaces of the base materials of the metal plate 20and 20 h such that the average thickness of the polished portions was0.2 μm. Specifically, Clean Etch CPB-40N (available from Mitsubishi GasChemical Company, Inc.) as a metal surface treatment agent was doubly(at a weight ratio) diluted with pure water and acid cleaning treatmentwas performed at 30° C. for 15 seconds.

On the other hand, under the conditions for the items Nos. 17 and 18, aspretreatment for the plating step, chemical polishing was performed onthe top surface of the base material of the metal plate 20 h of thesemiconductor device PKGh1 such that the average thickness of thepolished portions was 8 μm. Specifically, using an undiluted solution ofClean Etch CPB-50 (available from Mitsubishi Gas Chemical Company, Inc.)as a metal surface treatment agent, acid cleaning treatment wasperformed at 30° C. for 120 seconds.

For each of the semiconductor devices PKG1 and PKGh1, a plating time wasadjusted such that, e.g., the thickness of the metal film 32 shown inFIG. 6 was 5.0 μm, 7.5 μm, 10.0 μm, and 12.5 μm. In addition, therespective thicknesses of the metal films 22 and 22 h under the lowersurface 20 b of the metal plate 20 (“Lower Surface” shown in Tables 1and 2) and the respective thicknesses of the metal films 22 and 22 hcovering the upper end portion (“Upper End of Side Surface” shown inTables 1 and 2) of the side surface 20 s 2 (see FIGS. 9 and 34) weremeasured under each of the foregoing conditions.

For the measurement of the film thicknesses, an X-ray fluorescencethickness meter was used. Under each of the conditions shown in Tables 1and 2, five products were manufactured and the thicknesses of theindividual portions shown in Tables 1 and 2 were measured. The averagevalue thereof is shown in Tables 1 and 2.

Each of the metal films 22, 22 h, and 32 is made of a tin-bismuth alloyobtained by adding 2 wt % (percent by weight) of bismuth (Bi) to tin(Sn).

To examine the effect of the anneal treatment, as shown in FIG. 0.13,items on which the annealing step was performed after the leadseparation step (items each having “Performed*¹” in the “Anneal” columnin Tables 1 and 2) and items on which the annealing step was omitted(items each having “Not Performed” in the “Anneal” column in Tables 1and 2) were produced and compared to each other. Conditions for theanneal treatment were such that an annealing temperature was 150° C. andan annealing time was 1 hour.

Under the condition for the item No. 19 shown in Table 2, for thesemiconductor device PKGh1, the annealing step was performed after theplating step shown in FIG. 13 and before the metal plate separation stepshown in FIG. 13 (“Performed*²” in the “Anneal” column in Table 2). Notethat the conditions for the anneal treatment were the same.

For the evaluation of the wettability of the solder (in the“Wettability” column in Tables 1 and 2), as pretreatment, the pluralityof semiconductor devices PKG1 and the plurality of semiconductor devicesPKGh1 were stored under conditions such that a temperature was 85° C.and a humidity was 85% RH for 168 hours. Then, each of the semiconductordevices PKG1 and PKGh1 subjected to the foregoing pretreatment wassubjected to rosin-based flux treatment and immersed in a soldersolution of a tin-silver(3 wt %)-copper(0.5 wt %) alloy heated to 230°C. for 5 seconds. Then, each of the semiconductor devices PKG1 and PKGh1after the immersion was observed using a 10- to 20-power stereomicroscope. The semiconductor device PKG1 or PKGh1 in which thesolder-plated surface had an unwet portion corresponding to 5% or moreof the entire area of the solder-plated surface was determined to beunacceptable. Note that, under each of the conditions, the twentysemiconductor devices PKG1 and the twenty semiconductor devices PKGh1were manufactured. The number of the unacceptable ones of the twentysemiconductor devices PKG1 and the number of the unacceptable ones ofthe twenty semiconductor devices PKGh1 are shown in Tables 1 and 2.

For the evaluation of the whisker (“Whisker” column in Tables 1 and 2),each of the semiconductor devices PKG1 and PKGh1 was mounted over amounting substrate using a solder paste made of the tin-silver(3 wt%)-copper(0.5 wt %) alloy mentioned above. Then, a temperature/humiditycycle load was applied to each of the semiconductor devices PKG1 andPKGh1 in an uncleaned state. The temperature/humidity cycle load wasapplied under conditions such that the cycle in which each of thesemiconductor devices PKG1 and PKGh1 was stored at a temperature of 85°C. and a humidity of 85% RH for 200 hours and then stored at a roomtemperature and a room humidity for 24 hours was assumed to be one cycleand the five cycles were repeated.

After the foregoing temperature/humidity cycle load was applied, thewhiskers were observed using a 50-power stereo microscope. The whiskerswhich could be recognized were subjected to length measurement using a250- to 500-power microscope. For the length measurement of thewhiskers, under each of the conditions shown in Tables 1 and 2, fiveproducts were manufactured for each of the items of the semiconductordevices PKG1 and PKGh1. The average value of the respective maximumlengths of the whiskers observed in the five products of each of theitems and the maximum value of the respective lengths of the whiskersobserved in the five products of each of the items are shown in Tables 1and 2.

As schematically shown in FIG. 27, a majority of whiskers WIS were benthalfway during the growth thereof. Accordingly, the length of each ofthe whiskers WIS which was bent halfway was calculated as the sum oflengths L1 and L2.

TABLE 1 Thickness of Plating Metal Film (μm) Metal Plate WettabilityDevice Lead Metal Plate (Upper End of Unacceptable/ Whisker (μm)Category No. (Top Surface) (Lower Surface) Side Surface) Anneal Totalave. MAX PKGh1 1 5.0 5.1 6.2 Not Performed 1/20 27 42 2 5.0 5.1 6.2Performed*¹ 2/20 16 18 3 7.5 7.6 9.8 Not performed 0/20 55 102 4 7.5 7.69.8 Performed*¹ 0/20 28 58 5 10.0 10.3 12.9 Not Performed 0/20 104 248 610.0 10.3 12.9 Performed*¹ 0/20 51 165 7 12.5 12.7 16.3 Not Performed0/20 208 672 8 12.5 12.7 16.3 Performed*¹ 0/20 92 450 PKG1 9 5.0 5.1 5.2Not Performed 0/20 21 30 10 5.0 5.1 5.2 Performed*¹ 1/20 14 12 11 7.57.7 7.9 Not Performed 0/20 35 61 12 7.5 7.7 7.9 Performed*¹ 0/20 19 3013 10.0 10.3 10.4 Not Performed 0/20 60 120 14 10.0 10.3 10.4Performed*¹ 0/20 33 72 15 12.5 12.6 12.8 Not Performed 0/20 108 220 1612.5 12.6 12.8 Performed*¹ 0/20 53 158 *¹The annealing step wasperformed after the lead separation step

TABLE 2 Thickness of Plating Metal Film (μm) Metal Plate WettabilityDevice Lead Metal Plate (Upper End of Unacceptable/ Whisker (μm)Category No. (Top Surface) (Lower Surface) Side Surface) Anneal Totalave. MAX PKGh1 17 10.0 10.2 13.0 Not Performed 0/20 120 260 18 10.0 10.213.0 Performed*¹ 0/20 67 144 19 10.0 10.2 12.9 Performed*² 0/20 110 296*¹The annealing step was performed after the lead separation step *²Theannealing step was performed after the plating step and before the metalplate separation step

According to the result of evaluating the wettabilities of the itemsNos. 1, 2, 9, and 10 in Table 1, in terms of improving the mountingreliability of the semiconductor device, the thicknesses of the metalfilms 22 and 32 shown in FIG. 24 are preferably larger than 5.0 μm, morepreferably not less than 7.5 μm. It can be said that, when thethicknesses of the metal films 22 and 32 are not less than 7.5 μm, thewettability of the solder is excellent.

Next, according to the measurement results in the cells in the“Thickness of Plating Metal Film” column corresponding to the items Nos.1, 3, 5, and 7 in Table 1, when the thickness of the metal film 22 h isincreased, the thickness of the portion 22P1 covering the upper end ofthe side surface 20 s 2 shown in FIG. 34 accordingly increases. Also,according to the evaluation results in the cells in the “Whisker” columnunder these conditions, when the thickness of the metal film 22 h isincreased, each of the average value and the maximum value of thelengths of the whiskers accordingly increases.

The acceptable value of the length of each of the whiskers differsdepending on the arrangement pitch of the conductor pattern over thesubstrate over which the semiconductor device PKGh1 is mounted. Forexample, in the case where the semiconductor device PKGh1 is used forthe application which requires high reliability such as when thesemiconductor device PKGh1 is used as the semiconductor device mountedin an automobile or the like, the maximum length of the whiskers ispreferably not more than 200 μm.

Among the items Nos. 1, 3, 5, and 7, only the items Nos. 1 and 3 havethe maximum lengths of the whiskers which are not more than 200 μm.However, since the item No. 1 is unacceptable in terms of “Wettability”,only the item No. 3 satisfies the evaluation standard for “Wettability”and the evaluation standard for “Whisker”. When the range whichsatisfies each of the evaluation standard for “Wettability” and theevaluation standard for “Whisker” is thus narrow, control in themanufacturing process is difficult.

On the other hand, from the results of evaluating the whiskers in theitems Nos. 2, 4, 6, and 8 in Table 1, it can be seen that the maximumlengths of the whiskers are smaller than those in the items Nos. 1, 3,5, and 7. That is, the effect of reducing the maximum lengths of thewhiskers by performing the annealing step shown in FIG. 13 isrecognized. However, under the conditions for the item No. 8, themaximum length of the whiskers is 450 μm and, for the item No. 6 also, ahigh value of 165 μm was recognized as the maximum whisker length,though less than 200 μm. Accordingly, even when the anneal treatment isperformed on the semiconductor device PKGh1 shown in FIG. 34, it cannotbe said that the range which satisfies each of the evaluation standardfor “Wettability” and the evaluation standard for “Whisker” has beensatisfactorily widened.

When a comparison is made between the results of evaluating the whiskersin the item No. 5 in Table 1 and the whiskers in the item No. 19 inTable 2, the effect of improving the maximum length of the whiskers inthe item No. 5 cannot be recognized in the result of evaluating thewhiskers in the item “No. 19”. The maximum length of the whiskers in theitem No. 19 is larger than that in the item No. 5. This may beconceivable because, even when a strain in the plating metal film isremoved by performing the anneal treatment after the plating step, bysubsequently performing press working or the like, a new strain isformed as a result of the press working. Accordingly, the timing ofperforming the annealing step shown in FIG. 13 is particularlypreferably after the lead separation step, as shown in FIG. 13, and ispreferably at least after the metal plate separation step.

When a comparison is made between the respective results of evaluatingthe thicknesses of the plating metal films and the whiskers in the itemNo. 5 in Table 1 and the item No. 17 in Table 2 and a comparison is madebetween the respective results of evaluating the thicknesses of theplating metal films and the whiskers in the item No. 6 in Table 1 andthe item No. 18 in Table 2, neither the effect of improving thethicknesses of the plating metal films in the items Nos. 5 and 6 inTable 1 nor the effect of improving the maximum lengths of the whiskersin the items 5 and 6 in Table cannot be recognized in the results ofevaluating the thicknesses of the plating metal films and the maximumlengths of the whiskers in the items Nos. 17 and 18 in Table 2. From theevaluation results, it can be considered that, even when the thicknessof the polished portion of the surface to be plated is increased aspretreatment for the plating step, the effect of reducing the maximumlength of the whiskers cannot be obtained.

The results of measuring the thicknesses of the plating metal films andevaluating the whiskers in the items Nos. 1, 3, 5, and 7 in Table 1 arecompared to the results of measuring the thicknesses of the platingmetal films and evaluating the whiskers in the items Nos. 9, 11, 13, and15 in Table 1. As can be seen from Table 1, according to the presentembodiment, by providing the inclined surface 20 p as shown in FIG. 9,the thickness of the portion of the metal film 22 which covers theinclined surface is about 30% smaller than the thickness of the portion22P1 shown in FIG. 34. As the maximum length of the whiskers in the itemNo. 15, a high value of 220 μm was recognized, while the maximum lengthof the whiskers in the item No. 13 was 120 μm. Thus, the range whichsatisfies each of the evaluation standard for “Wettability” and theevaluation standard for “Whisker” is surely wider than that for thesemiconductor device PKGh1.

When the results of evaluating the whiskers in the items Nos. 10, 12,14, and 16 in Table 1 are compared to each other, even in the item No.16, the maximum length of the whiskers is not more than 200 μm. Notethat, since 158 μm is a numerical value close to 200 μm, 158 μm is notincluded in the range which satisfies each of the evaluation standardfor “Wettability” and the evaluation standard for “Whisker”. However, itcan be said that the foregoing range has been significantly widenedcompared to the range in the case of the semiconductor device PKGh1.

As described above, according to the present embodiment, by forming theinclined surface 20 p shown in FIG. 9, whisker growth can be suppressed.Also, by performing the anneal treatment after the lead separation stepshown in FIG. 13, whisker growth can more reliably be suppressed. As aresult, it is possible to improve the reliability of the semiconductordevice PKG1 and the reliability of the electronic device in which thesemiconductor device PKG1 is mounted.

While the invention achieved by the present inventors has beenspecifically described heretofore on the basis of the embodimentthereof, the present invention is not limited to the foregoingembodiment. It will be appreciated that various changes andmodifications can be made in the invention within the scope notdeparting from the gist thereof.

For example, in the foregoing embodiment, as shown in FIG. 9, thedescription has been given using the example in which the inclinedsurface 20 p at a given inclination angle is interposed between the sidesurface 20 s 2 and the upper surface 20 t. However, as described above,a curved surface 20 r may also be interposed between the side surface 20s 2 and the upper surface 20 t as in, e.g., a semiconductor device PKG2shown in FIG. 28 as long as the curved surface can reduce theconcentration of the current density in the plating step. FIG. 28 is anenlarged cross-sectional view showing a state before the portion of themetal plate of a semiconductor device as a modification of the stateshown in FIG. 9 is mounted over a mounting substrate.

The semiconductor device PKG2 shown in FIG. 28 is different from thesemiconductor device PKG1 shown in FIG. 9 in that the curved surface 20r is interposed between the side surface 20 s 2 and the upper surface 20t of the metal plate 20, but the inclined surface 20 p shown in FIG. 9is not Interposed therebetween.

The curved surface 20 r protrudes toward the outside of the basematerial 21 of the metal plate 20. Accordingly, at each of the side 20 m1 where the upper surface 20 t and the curved surface 20 r cross eachother and the side 20 m 2 where the side surface 20 s 2 and the curvedsurface 20 r cross each other, respective obtuse angles are formedbetween the curved surface 20 r and the side surface 20 s 2 and betweenthe curved surface 20 r and the upper surface 20 t. By thus providingthe curved surface 20 r, it is possible to suppress the concentration ofthe current density in the plating step in the same manner as in thecase of providing the inclined surface 20 p shown in FIG. 9 describedabove. As a result, it is possible to suppress whisker formationresulting from the formation of the portion 22P1 shown in FIG. 34.

As described above, according to the study by the present inventors,there is a case where a small curved surface is formed at the peripheraledge portion of the side surface 20 s 2 due to the clearance between thepunch 61P and the die 61D shown in FIG. 19. For example, in the case ofpressing the punch 61P from the upper surface 20 t of the metal plate 20against the lower surface 20 b thereof as shown in FIG. 19, a smallcurved surface may be formed at the boundary between the side surface 20s 2 and the inclined surface 20 p. Conversely, in the case of pressingthe punch 61P from the lower surface 20 b of the metal plate 20 againstthe upper surface 20 t thereof, a small curved surface may be formed atthe boundary between the lower surface 20 b and the side surface 20 s 2.

However, according to the study by the present inventors, the radius ofcurvature of the curved surface thus formed due to the clearance duringthe press working is about several micrometers to several tens ofmicrometers and is less than 5% of the thickness of the metal plate 20.Therefore, it has been found that, from the curved surface formed due tothe clearance during the press working, the effect of suppressing theconcentration of the current density in the plating step can scarcely beexpected.

Accordingly, in the case of providing the curved surface 20 r in termsof suppressing the concentration of the current density in the platingstep, a radius of curvature 2R1 of the curved surface 20 r is preferablynot less than a given value. For example, the radius of curvature 2R1 ofthe curved surface 20 r is preferably larger than 10% of the thickness(plate thickness) 2T1 of the base material 21 of the metal plate 20shown in FIG. 28. In this case, specifically, in a direction(Z-direction in FIG. 28) extending from one of the upper and lowersurfaces 20 t and 20 b of the metal plate 20, the height 2H1 between theside 20 m 1 where the curved surface 20 r and the upper surface 20 tcross each other and the side 20 m 2 where the curved surface 20 r andthe side surface 20 s 2 cross each other is larger than 10% of thethickness 2T1 as the distance between the upper and lower surfaces 20 tand 20 b apart from each other.

For example, when the thickness of the base material 21 of the metalplate 20 shown in FIG. 28 is 1 mm, the radius of curvature 2R1 of thecurved surface 20 r in the thickness direction (Z-direction) ispreferably larger than 0.1 mm. Alternatively, when the thickness of thebase material 21 of the metal plate 20 shown in FIG. 28 is 500 μm, theradius of curvature 2R1 of the curved surface 20 r in the thicknessdirection (Z-direction) is preferably larger than 50 μm. When the radiusof curvature 2R1 is larger than 10% of the thickness 2T1, the effect ofreducing the likelihood of the formation of the portion 22P1 shown inFIG. 34 in the plating step can be recognized.

The radius of curvature 2R1 of the curved surface 20 r is morepreferably not less than ¼ (not less than 25%) of the thickness 2T1 asthe distance between the upper and lower surfaces 20 t an 20 b apartfrom each other. For example, when the thickness of the base material 21of the metal plate 20 shown in FIG. 28 is 1 mm, the radius of curvature2R1 of the curved surface 20 r is not less than 0.25 mm. Alternatively,when the thickness of the base material 21 of the metal plate 20 shownin FIG. 28 is 500 μm, the radius of curvature 2R1 of the curved surface20 r is preferably not less than 125 μm. When the height 2H1 is not lessthan ¼ of the thickness 2T1, the portion 22P1 shown in FIG. 34 cansignificantly be reduced in the plating step. This can stably suppressthe whisker growth described above.

Note that, in the description given above, the inclined surface 20 pshown in FIG. 9 described above is formed by, e.g., press working. Thecurved surface 20 r shown in FIG. 28 can also be formed by, e.g., pressworking. Alternatively, the inclined surface 20 p and the curved surface20 r may also be formed by a mechanical grinding process, a chemicalpolishing process, or a combination thereof. In the case of forming theinclined surface 20 p or the curved surface 20 r each of which needs agiven dimension using only a chemical mechanical method, a polishingtime is required and, consequently, a curved surface which is recessedtoward the center of the metal plate 20 may be formed. When the curvedsurface which is recessed toward the center of the metal plate 20 isformed, the angles θ1 and θ2 shown in FIG. 8 may be not more than 90degrees. Accordingly, in terms of assuring that the angles θ1 and θ2 areobtuse, press working or a mechanical grinding process is preferred. Onthe other hand, in terms of reducing a working time, press working isparticularly preferable. As described above, a working method used toform the curved surface 20 r is referred to as the R-chamfering.

Except for the different portions described above, the semiconductordevice PKG2 shown in FIG. 28 is the same as the semiconductor devicePKG1 shown in FIG. 9 described above. Among the individual componentsdescribed using FIGS. 1 to 27, the portion described as the inclinedsurface 20 p is replaced with the curved surface 20 r to allow thecurved surface 20 r and the other components of the semiconductor devicePKG1 to be used appropriately. Accordingly, a repeated descriptionthereof is omitted.

Also, using FIG. 13, the description has been given of the example ofthe manufacturing method which performs the metal plate separation stepafter the plating step. In this case, as shown in FIG. 11, among theplurality of side surfaces 20 s of the metal plate 20, the side surfaces20 s 3 and 20 s 4 are exposed from the metal film 22. However, in termsof further improving the mounting strength of the semiconductor devicePKG1, the surface of the metal plate 20 which is exposed from thesealing body 40 shown in FIG. 3 is preferably entirely covered with themetal film 22 (see FIG. 11). A description will be given below of amodification of the semiconductor device PKG1.

FIG. 29 is a two-dimensional view showing a semiconductor device as amodification of the semiconductor device shown in FIG. 3. FIG. 30 is across-sectional view along the line A-A in FIG. 29. FIG. 31 is across-sectional view along the line B-B in FIG. 29.

A semiconductor device PKG3 shown in FIGS. 29 to 31 is different fromthe semiconductor device PKG1 shown in FIG. 3 in the following points.That is, the plurality of side surfaces 20 s of the metal plate 20 ofthe semiconductor device PKG3 include the side surface 20 s 3 continuedto one end portion of the side surface 20 s 2 and the side surface 20 s4 continued to the other end portion of the side surface 20 s. As shownin FIG. 30, each of the side surfaces 20 s 3 and 20 s 4 of thesemiconductor device PKG3 is covered with the metal film 22.

Also, between the exposed portion 20 tC of the upper surface 20 t of themetal plate 20 which is exposed from the sealing body 40 (see FIG. 29)and the side surface 20 s 3, an inclined surface 20 p 2 which isinclined with respect to each of the upper surface 20 t and the sidesurface 20 s 3 and covered with the metal film 22 is interposed. Also,between the exposed portion 20 tC and the side surface 20 s 4, aninclined surface 20 p 3 which is inclined with respect to each of theupper surface 20 t and the side surface 20 s 4 and covered with themetal film 22 is interposed. Also, between the exposed portion 20 tC andthe side surface 20 s 2 shown in FIG. 29, an inclined surface 20 p 1which is inclined with respect to each of the upper surface 20 t and theside surface 20 s 2 and covered with the metal film 22 is interposed.

The plurality of side surfaces 20 s of the metal plate of thesemiconductor device PKG3 also include the side surface 20 s 5 continuedto the end portion of the side surface 20 s 3 and the side surface 20 s6 continued to the end portion of the side surface 20 s 4. As shown inFIG. 31, each of the side surfaces 20 s 5 and 20 s 6 of thesemiconductor device PKG3 is covered with the metal film 22.

Between the exposed portion 20 tC of the upper surface 20 t of the metalplate 20 which is exposed from the sealing body 40 (see FIG. 29) and theside surface 20 c 5, an inclined surface 20 p 4 which is inclined withrespect to each of the upper surface 20 t and the side surface 20 s 5and covered with the metal film 22 is interposed. Also, between theexposed portion 20 tC and the side surface 20 s 6, an inclined surface20 p 5 which is inclined with respect to each of the upper surface 20 tand the side surface 20 s 6 and covered with the metal film 22 isinterposed.

Note that each of the inclined surfaces 20 p 1, 20 p 2, 20 p 3, 20 p 4,and 20 p 5 shown in FIG. 29 is provided in terms of suppressing theconcentration of the current density in the plating step, similarly tothe inclined surface 20 p described using FIG. 3. Accordingly, therespective preferred heights and inclination angles of the inclinedsurfaces 20 p 1, 20 p 2, 20 p 3, 20 p 4, and 20 p 5 are the same as thepreferred height and inclination angle of the inclined surface 20 p thathas been already described. Therefore, a repeated description thereof isomitted. Also, as a further modification of the inclined surfaces shownin FIG. 29, some or all of the inclined surfaces 20 p 1, 20 p 2, 20 p 3,20 p 4, and 20 p 5 may also be each replaced with the curved surface 20r shown in FIG. 28.

As shown in FIG. 29, in the semiconductor device PKG3, each of theportions of the metal plate 20 which are exposed from the sealing body40 is covered with the metal film 22 shown in FIGS. 30 and 31.Consequently, the wettability of the solder to the metal plate 20 whenthe semiconductor device PKG3 is mounted over the mounting substrate 50shown in FIG. 7 can further be improved compared to that when thesemiconductor device PKG1 shown in FIG. 3 is mounted thereover. As aresult, the mounting reliability of the semiconductor device PKG3 canfurther be improved compared to that of the semiconductor device PKG1.

The structure of the semiconductor device PKG3 is the same as thestructure of the semiconductor device PKG1 shown in FIG. 3 except forthe different points described above. Therefore, a repeated descriptionthereof is omitted.

Next, a description will be given of a method of manufacturing thesemiconductor device PKG3 with a focus on the difference from themanufacturing method shown in FIG. 13. FIG. 32 is an illustrative viewshowing a modification of the manufacturing method shown in FIG. 13.

The manufacturing method of the semiconductor device shown in FIG. 32 isdifferent from the manufacturing method of the semiconductor deviceshown in FIG. 13 in that the metal plate separation step is performedbefore the plating step. That is, in the modification shown in FIG. 32,the plating step is performed in a state where the plurality of metalplates 20 formed in the lead frame are separated from each other.

In this case, in the plating step, the current density may beconcentrated not only on the side surface 20 s 2 shown in FIG. 29, butalso on the side surfaces 20 s 3 and 20 s 4. In the side surfaces 20 s 5and 20 s 6, the possibility of the occurrence of the concentration ofthe current density is lower than in the side surfaces 20 s 3 and 20 s4, but there is the possibility of the concentration of the currentdensity. Accordingly, in the case of the present modification, as shownin FIG. 32, the inclined surface formation step is performed after themetal plate separation step and before the plating step. In theinclination surface formation step, at least the inclined surfaces 20 p2 and 20 p 3 shown in FIG. 30 are formed. The inclined surfaces 20 p 4and 20 p 5 shown in FIG. 31 may also be formed in advance in the leadframe provision step shown in FIG. 32 or formed in the inclined surfaceformation step shown in FIG. 32.

Each of the inclined surfaces 20 p 2 to 20 p 5 is formed by, e.g., pressworking. Alternatively, as in the modification described above, each ofthe inclined surfaces 20 p 2 to 20 p 5 may also be formed by amechanical grinding process. By forming the inclined surfaces 20 p 2 and20 p 3 shown in FIG. 30 in the inclined surface formation step shown inFIG. 32, it is possible to prevent the thickness of the metal film 22from being increased between the upper surface 20 t and the sidesurfaces 20 s 3 and 20 s 4. As a result, it is possible to suppresswhisker growth resulting from a locally increased thickness of the metalfilm.

Although the description has been given above of, e.g., the variousmodifications, the individual modifications described above can be usedin combination.

A technical idea extracted for a method of manufacturing thesemiconductor device described in the foregoing embodiment can bedescribed as follows.

(Note 1)

A method of manufacturing a semiconductor device, including the stepsof:

(a) providing a lead frame having a first metal plate, a plurality ofleads arranged in juxtaposition with the first metal plate, and a frameportion coupled to the first metal plate and to the leads;

(b) mounting a semiconductor chip over a first surface of the firstmetal plate of the lead frame and electrically coupling thesemiconductor chip to the leads;

(c) sealing the entire semiconductor chip, a portion of the first metalplate, and a portion of each of the leads with a resin to form a sealingbody;

(d) forming a first metal film over a portion of the lead frame which isexposed from the sealing body using an electrolytic plating method; and

(e) after the step (d), cutting each of the leads to separate the leadsfrom the frame portion, in which the first metal plate has a secondsurface opposite to the first surface and a plurality of side surfaceslocated between the first and second surfaces, in which the sidesurfaces of the first metal plate include:

a first side surface provided to face each of the leads in plan view andsealed in the sealing body in the step (c); and

a second side surface provided opposite to the first side surface,exposed from the sealing body in the step (c), and covered with thefirst metal film in the step (d),

in which, before the step (d), a third surface is formed between a firstexposed portion of the first surface of the first metal plate which isexposed from the sealing body in the step (c) and the second sidesurface, and

in which each of a first angle formed between the third and firstsurfaces and a second angle formed between the third surface and thesecond side surface is larger than 90 degrees.

(Note 2)

The method of manufacturing the semiconductor device in Note 1, furtherincluding the step of:

(f) after the step (e), heating the first metal film to reduce a strainin the first metal film.

(Note 3)

In the method of manufacturing the semiconductor device in Note 1, thethird surface is formed by press working.

(Note 4)

In the method of manufacturing the semiconductor device in Note 1, in afirst direction extending from one of the first and second surfaces ofthe first metal plate toward the other thereof, a first height between afirst side where the third and first surfaces cross each other and asecond side where the third surface and the second side surface crosseach other is larger than 10% of a distance between the first and secondsurfaces apart from each other.

(Note 5)

In the method of manufacturing the semiconductor device in Note 1, in afirst direction extending from one of the first and second surfaces ofthe first metal plate toward the other thereof, a first height between afirst side where the third and first surfaces cross each other and asecond side where the third surface and the second side surface crosseach other is not less than ¼ of a distance between the first and secondsurfaces apart from each other.

(Note 6)

A method of manufacturing a semiconductor device, including the stepsof:

(a) providing a lead frame having a plurality of first metal platesconnected via a tie bar, a plurality of leads arranged in juxtapositionwith each of the first metal plates, and a frame portion coupled to thefirst metal plates and to the leads;

(b) mounting a plurality of semiconductor chips over respective firstsurfaces of the first metal plates of the lead frame to electricallycouple the semiconductor chips to the leads;

(c) sealing the semiconductor chips with a resin to form a plurality ofsealing bodies;

(d) forming a first metal film over each of portions of the lead framewhich are exposed from the sealing bodies using an electrolytic platingmethod;

(e) cutting the tie bar connecting the first metal plates to separatethe first metal plates from each other; and

(f) after the step (d), cutting the leads to separate the leads from theframe portion,

in which each of the first metal plates has a second surface opposite tothe first surface and a plurality of side surfaces located between thefirst and second surfaces,

in which the side surfaces of each of the first metal plates include:

a first side surface provided to face each of the leads in plan view andsealed in any of the sealing bodies in the step (c); and

a second side surface provided opposite to the first side surface,exposed from the sealing bodies in the step (c), and covered with thefirst metal film in the step (d),

in which, before the step (d), a third surface is formed between thefirst surface and the second side surface of each of the first metalplates, and

in which each of a first angle formed between the third and firstsurfaces and a second angle formed between the third surface and thesecond side surface is larger than 90 degrees.

(Note 7)

In the method of manufacturing the semiconductor device in Note 6, thestep (e) includes the steps of:

(e1) after the step (d), cutting a portion of each of the tie bar andthe first metal plates to expose a third side surface continued to oneend portion of the second side surface and to one end portion of thethird surface; and

(e2) after the step (d), cutting another portion of each of the tie barand the first metal plates to expose a fourth side surface continued tothe other end portion of the second side surface and to the other endportion of the third surface, and

each of the third and fourth side surfaces is continued to the firstsurface of each of the first metal plates.

(Note 8)

The method of manufacturing the semiconductor device in Note 7, furtherincluding the step of:

(g) after the step (e), heating the first metal film to reduce a strainin the first metal film.

(Note 9)

In the method of manufacturing the semiconductor device in Note 6, thestep (e) includes the steps of:

(e1) before the step (d), cutting a portion of each of the tie bar andthe first metal plates to expose a third side surface continued to oneend portion of the second side surface and to one end portion of thethird surface;

(e2) before the step (d), cutting a portion of each of the tie bar andthe first metal plates to expose a fourth side surface continued to theother end portion of the second side surface and to the other endportion of the third surface;

(e3) after the step (e1) and before the step (d), forming a fourthsurface between the first surface and the third side surface; and

(e4) after the step (e2) and before the step (d), forming a fifthsurface between the first surface and the fourth side surface, and

each of a third angle formed between the fourth and first surfaces, afourth angle formed between the fourth surface and the third sidesurface, a fifth angle formed between the fifth and first surfaces, anda sixth angle formed between the fifth surface and the fourth sidesurface is larger than 90 degrees.

(Note 10)

In the method of manufacturing the semiconductor device in Note 9, eachof the third, fourth, and fifth surfaces is formed by press working.

1-19. (canceled)
 20. A method of manufacturing a semiconductor device,including the steps of: (a) providing a lead frame having a first metalplate, a plurality of leads arranged in juxtaposition with the firstmetal plate, and a frame portion coupled to the first metal plate and tothe leads; (b) mounting a semiconductor chip over a first surface of thefirst metal plate of the lead frame and electrically coupling thesemiconductor chip to the leads; (c) sealing the entire semiconductorchip, a portion of the first metal plate, and a portion of each of theleads with a resin to form a sealing body; (d) forming a first metalfilm over a portion of the lead frame which is exposed from the sealingbody using an electrolytic plating method; and (e) after the step (d),cutting each of the leads to separate the leads from the frame portion,wherein the first metal plate has a second surface opposite to the firstsurface and a plurality of side surfaces located between the first andsecond surfaces, wherein the side surfaces of the first metal plateinclude: a first side surface provided to face each of the leads in planview and sealed in the sealing body in the step (c); and a second sidesurface provided opposite to the first side surface, exposed from thesealing body in the step (c), and covered with the first metal film inthe step (d), wherein before the step (d), a third surface is formedbetween a first exposed portion of the first surface of the first metalplate which is exposed from the sealing body in the step (c) and thesecond side surface, and wherein each of a first angle formed betweenthe third and first surfaces and a second angle formed between the thirdsurface and the second side surface is larger than 90 degrees.
 21. Themethod according to claim 20, further including the step of: (f) afterthe step (e), heating the first metal film to reduce a strain in thefirst metal film.
 22. The method according to claim 20, wherein thethird surface is formed by press working.
 23. The method according toclaim 20, wherein, in a first direction extending from one of the firstand second surfaces of the first metal plate toward the other thereof, afirst height between a first side where the third and first surfacescross each other and a second side where the third surface and thesecond side surface cross each other is larger than 10% of a distancebetween the first and second surfaces apart from each other.
 24. Themethod according to claim 20, wherein, in a first direction extendingfrom one of the first and second surfaces of the first metal platetoward the other thereof, a first height between a first side where thethird and first surfaces cross each other and a second side where thethird surface and the second side surface cross each other is not lessthan ¼ of a distance between the first and second surfaces apart fromeach other.
 25. A method of manufacturing a semiconductor device,including the steps of: (a) providing a lead frame having a plurality offirst metal plates connected via a tie bar, a plurality of leadsarranged in juxtaposition with each of the first metal plates, and aframe portion coupled to the first metal plates and to the leads; (b)mounting a plurality of semiconductor chips over respective firstsurfaces of the first metal plates of the lead frame to electricallycouple the semiconductor chips to the leads; (c) sealing thesemiconductor chips with a resin to form a plurality of sealing bodies;(d) forming a first metal film over each of portions of the lead framewhich are exposed from the sealing bodies using an electrolytic platingmethod; (e) cutting the tie bar connecting the first metal plates toseparate the first metal plates from each other; and (f) after the step(d), cutting the leads to separate the leads from the frame portion,wherein each of the first metal plates has a second surface opposite tothe first surface and a plurality of side surfaces located between thefirst and second surfaces, wherein the side surfaces of each of thefirst metal plates include: a first side surface provided to face eachof the leads in plan view and sealed in any of the sealing bodies in thestep (c); and a second side surface provided opposite to the first sidesurface, exposed from the sealing bodies in the step (c), and coveredwith the first metal film in the step (d), wherein, before the step (d),a third surface is formed between the first surface and the second sidesurface of each of the first metal plates, and wherein each of a firstangle formed between the third and first surfaces and a second angleformed between the third surface and the second side surface is largerthan 90 degrees.
 26. The method according to claim 25, wherein the step(e) includes the steps of: (e1) after the step (d), cutting a portion ofeach of the tie bar and the first metal plates to expose a third sidesurface continued to one end portion of the second side surface and toone end portion of the third surface; and (e2) after the step (d),cutting another portion of each of the tie bar and the first metalplates to expose a fourth side surface continued to the other endportion of the second side surface and to the other end portion of thethird surface, and each of the third and fourth side surfaces iscontinued to the first surface of each of the first metal plates. 27.The method according to claim 26, further including the step of: (g)after the step (e), heating the first metal film to reduce a strain inthe first metal film.
 28. The method according to claim 25, wherein thestep (e) includes the steps of: (e1) before the step (d), cutting aportion of each of the tie bar and the first metal plates to expose athird side surface continued to one end portion of the second sidesurface and to one end portion of the third surface; (e2) before thestep (d), cutting a portion of each of the tie bar and the first metalplates to expose a fourth side surface continued to the other endportion of the second side surface and to the other end portion of thethird surface; (e3) after the step (e1) and before the step (d), forminga fourth surface between the first surface and the third side surface;and (e4) after the step (e2) and before the step (d), forming a fifthsurface between the first surface and the fourth side surface, andwherein each of a third angle formed between the fourth and firstsurfaces, a fourth angle formed between the fourth surface and the thirdside surface, a fifth angle formed between the fifth and first surfaces,and a sixth angle formed between the fifth surface and the fourth sidesurface is larger than 90 degrees.
 29. The method according to claim 28,wherein each of the third, fourth, and fifth surfaces is formed by pressworking.